Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes

Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes

We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (...

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Veröffentlicht in:Физика низких температур
Datum:2002
Hauptverfasser: Belogolovskii, M.A., Revenko, Yu.F., Gerasimenko, A.Yu., Svistunov, V.M., Hatta, E., Plitnik, G., Shaternik, V.E., Rudenko, E.M.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2002
Schlagworte:
Свеpхпpоводимость, в том числе высокотемпеpатуpная
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/130216
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-130216
record_format dspace
spelling Belogolovskii, M.A.
Revenko, Yu.F.
Gerasimenko, A.Yu.
Svistunov, V.M.
Hatta, E.
Plitnik, G.
Shaternik, V.E.
Rudenko, E.M.
2018-02-09T09:52:09Z
2018-02-09T09:52:09Z
2002
Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ.
0132-6414
PACS: 75.70.Cn, 72.10.Di, 73.40.-c
https://nasplib.isofts.kiev.ua/handle/123456789/130216
We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (supposedly, oxygen ion displacements) caused by applying high voltages to the junctions have been observed. This effect is believed to be responsible for an enormous growth of inelastic tunneling processes across a transition region that reveals itself in an overall "V"-shaped conductance background, with a strong temperature impact. The mechanism of the inelastic scattering is ascribed to charge transmission across magnetically active interfaces between two electrodes forming the junction. To support the latter statement, we have fabricated planar junctions between Cr and Ag films with an antiferromagnetic chromium oxide Cr₂O₃ as a potential barrier and at high-bias voltages have found an identical conductance trend with a similar temperature effect.
We thank Prof. M. A. Obolenskii, Prof. A. N. Omelyanchouk, and Prof. Yu. V. Medvedev for stimulating discussions. VMS is grateful to the Ministry of Education, Culture, Science and Technology of Japan for support of his stay at Hokkaido University and to the Research and Educational Fund of the Frostburg State University for support of his stay in the USA.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Свеpхпpоводимость, в том числе высокотемпеpатуpная
Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
spellingShingle Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
Belogolovskii, M.A.
Revenko, Yu.F.
Gerasimenko, A.Yu.
Svistunov, V.M.
Hatta, E.
Plitnik, G.
Shaternik, V.E.
Rudenko, E.M.
Свеpхпpоводимость, в том числе высокотемпеpатуpная
title_short Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
title_full Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
title_fullStr Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
title_full_unstemmed Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
title_sort inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
author Belogolovskii, M.A.
Revenko, Yu.F.
Gerasimenko, A.Yu.
Svistunov, V.M.
Hatta, E.
Plitnik, G.
Shaternik, V.E.
Rudenko, E.M.
author_facet Belogolovskii, M.A.
Revenko, Yu.F.
Gerasimenko, A.Yu.
Svistunov, V.M.
Hatta, E.
Plitnik, G.
Shaternik, V.E.
Rudenko, E.M.
topic Свеpхпpоводимость, в том числе высокотемпеpатуpная
topic_facet Свеpхпpоводимость, в том числе высокотемпеpатуpная
publishDate 2002
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (supposedly, oxygen ion displacements) caused by applying high voltages to the junctions have been observed. This effect is believed to be responsible for an enormous growth of inelastic tunneling processes across a transition region that reveals itself in an overall "V"-shaped conductance background, with a strong temperature impact. The mechanism of the inelastic scattering is ascribed to charge transmission across magnetically active interfaces between two electrodes forming the junction. To support the latter statement, we have fabricated planar junctions between Cr and Ag films with an antiferromagnetic chromium oxide Cr₂O₃ as a potential barrier and at high-bias voltages have found an identical conductance trend with a similar temperature effect.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/130216
citation_txt Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ.
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first_indexed 2025-12-07T19:15:26Z
last_indexed 2025-12-07T19:15:26Z
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