Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes
We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2002 |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2002
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| Zitieren: | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862729484197691392 |
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| author | Belogolovskii, M.A. Revenko, Yu.F. Gerasimenko, A.Yu. Svistunov, V.M. Hatta, E. Plitnik, G. Shaternik, V.E. Rudenko, E.M. |
| author_facet | Belogolovskii, M.A. Revenko, Yu.F. Gerasimenko, A.Yu. Svistunov, V.M. Hatta, E. Plitnik, G. Shaternik, V.E. Rudenko, E.M. |
| citation_txt | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (supposedly, oxygen ion displacements) caused by applying high voltages to the junctions have been observed. This effect is believed to be responsible for an enormous growth of inelastic tunneling processes across a transition region that reveals itself in an overall "V"-shaped conductance background, with a strong temperature impact. The mechanism of the inelastic scattering is ascribed to charge transmission across magnetically active interfaces between two electrodes forming the junction. To support the latter statement, we have fabricated planar junctions between Cr and Ag films with an antiferromagnetic chromium oxide Cr₂O₃ as a potential barrier and at high-bias voltages have found an identical conductance trend with a similar temperature effect.
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| first_indexed | 2025-12-07T19:15:26Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-130216 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T19:15:26Z |
| publishDate | 2002 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| spelling | Belogolovskii, M.A. Revenko, Yu.F. Gerasimenko, A.Yu. Svistunov, V.M. Hatta, E. Plitnik, G. Shaternik, V.E. Rudenko, E.M. 2018-02-09T09:52:09Z 2018-02-09T09:52:09Z 2002 Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes / M.A. Belogolovskii, Yu. F. Revenko, A.Yu. Gerasimenko, V.M. Svistunov, E.Hatta, G.Plitnik, V.E. Shaternik, E.M. Rudenko // Физика низких температур. — 2002. — Т. 28, № 6. — С. 553-557. — Бібліогр.: 14 назв. — англ. 0132-6414 PACS: 75.70.Cn, 72.10.Di, 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/130216 We report a study of the electron tunneling transport in point-contact junctions formed by a sharp Ag tip and two different highly correlated oxides, namely, a magnetoresistive manganite La₀.₆₆Ca₀.₃₄MnO₃ and a superconducting cuprate LaBa₂Cu₃O₇₋x. Strong chemical modifications of the oxide surface (supposedly, oxygen ion displacements) caused by applying high voltages to the junctions have been observed. This effect is believed to be responsible for an enormous growth of inelastic tunneling processes across a transition region that reveals itself in an overall "V"-shaped conductance background, with a strong temperature impact. The mechanism of the inelastic scattering is ascribed to charge transmission across magnetically active interfaces between two electrodes forming the junction. To support the latter statement, we have fabricated planar junctions between Cr and Ag films with an antiferromagnetic chromium oxide Cr₂O₃ as a potential barrier and at high-bias voltages have found an identical conductance trend with a similar temperature effect. We thank Prof. M. A. Obolenskii, Prof. A. N.
 Omelyanchouk, and Prof. Yu. V. Medvedev for
 stimulating discussions. VMS is grateful to the
 Ministry of Education, Culture, Science and Technology
 of Japan for support of his stay at Hokkaido
 University and to the Research and Educational
 Fund of the Frostburg State University for support
 of his stay in the USA. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Свеpхпpоводимость, в том числе высокотемпеpатуpная Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes Article published earlier |
| spellingShingle | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes Belogolovskii, M.A. Revenko, Yu.F. Gerasimenko, A.Yu. Svistunov, V.M. Hatta, E. Plitnik, G. Shaternik, V.E. Rudenko, E.M. Свеpхпpоводимость, в том числе высокотемпеpатуpная |
| title | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| title_full | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| title_fullStr | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| title_full_unstemmed | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| title_short | Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| title_sort | inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes |
| topic | Свеpхпpоводимость, в том числе высокотемпеpатуpная |
| topic_facet | Свеpхпpоводимость, в том числе высокотемпеpатуpная |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/130216 |
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