Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4
Дослiджено температурнi залежностi електропровiдностi, коефiцiєнт термо-ерс та спектральний розподiл фотопровiдностi твердих розчинiв AgCd2-xMnxGaSe4 з iзовалентним замiщенням Cd → Mn. Згiдно iз рентгенофазовим аналiзом у системi AgCd2-xMnxGaSe4 спостерiгається утворення протяжного твердого розчину,...
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Відділення фізики і астрономії НАН України
2010
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 / В.В. Божко, Л.В. Булатецька, Г.Є. Давидюк, О.В. Парасюк, В.П. Сачанюк, А.П. Третяк // Укр. фіз. журн. — 2010. — Т. 55, № 2. — С. 208-211. — Бібліогр.: 9 назв. — укр. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859867263783403520 |
|---|---|
| author | Божко, В.В. Булатецька, Л.В. Давидюк, Г.Є. Парасюк, О.В. Сачанюк, В.П. Третяк, А.П. |
| author_facet | Божко, В.В. Булатецька, Л.В. Давидюк, Г.Є. Парасюк, О.В. Сачанюк, В.П. Третяк, А.П. |
| citation_txt | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 / В.В. Божко, Л.В. Булатецька, Г.Є. Давидюк, О.В. Парасюк, В.П. Сачанюк, А.П. Третяк // Укр. фіз. журн. — 2010. — Т. 55, № 2. — С. 208-211. — Бібліогр.: 9 назв. — укр. |
| collection | DSpace DC |
| description | Дослiджено температурнi залежностi електропровiдностi, коефiцiєнт термо-ерс та спектральний розподiл фотопровiдностi твердих розчинiв AgCd2-xMnxGaSe4 з iзовалентним замiщенням Cd → Mn. Згiдно iз рентгенофазовим аналiзом у системi AgCd2-xMnxGaSe4 спостерiгається утворення протяжного твердого розчину, граничний склад якого є AgCd0,74Mn1,26GaSe4. Проаналiзовано фотопровiднiсть сплавiв системи AgCd2-xMnxGaSe4. По максимуму власної фотопровiдностi оцiнено ширину забороненої зони при T ≈ 297 К. У межах однофазного твердого розчину вона збiльшується вiд ~ 1, 75 еВ для 100 мол.% AgCd2GaSe4–0 мол.% “AgMn2GaSe4” до 2,3 еВ для 40 мол.% AgCd2GaSe4–60 мол.% “AgMn2GaSe4”. Всi однофазнi твердi розчини фоточутливi з кратнiстю змiни провiдностi, при освiтленнi 103 лк, що дорiвнює ~ 10^1 - 10^3, в залежностi вiд компонентного складу зразка.
Исследованы температурная зависимость электропроводности коэффициента термо-эдс и спектральное распределение фотопроводимости твердых растворов AgCd2-xMnxGaSe4 с изовалентным замещением Cd → Mn. В соответствии с рентгенофазовым анализом в системе AgCd2-xMnxGaSe4 наблюдается образование протяженного твердого раствора, предельным составом которого является AgCd0,74Mn1,26GaSe. Проанализирована фотопроводимость сплавов системы AgCd2-xMnxGaSe4. По максимуму собственной фотопроводимости оценена ширина запрещенной зоны при 297 К. В пределах твердого раствора она увеличивается от ~ 1,75 эВ для 100 мол.% AgCd2GaSe4–0 мол.% “AgMn2GaSe4” до 2,3 эВ для 40 мол.% AgCd2GaSe4–60 мол.% “AgMn2GaSe4”. Все однофазные твердые растворы фоточувствительные с кратностью изменения проводимости, при освещении 103 лк, равной ~ 10^1 - 10^3, в зависимости от компонентного состава образца.
Temperature dependences of the conductivity coefficient and the thermal electromotive force, as well as the spectral distribution of photoconductivity, of AgCd2-xMnxGaSe4 solid solutions with the isovalent substitution Cd → Mn have been studied. The results of x-ray phase analysis of the AgCd2-xMnxGaSe4 system testify that an extensive solid solution with the limiting composition AgCd0,74Mn1,26GaSe emerges in it. The photoconductivity of AgCd2-xMnxGaSe4 alloys has been considered, and, by analyzing the position of intrinsic photoconductivity maximum, the band gap width at T ≈ 297 K has been evaluated. Within the solid solutions range, the gap width increases from about 1,75 eV for pure AgCd2GaSe4 to 2,3 eV for the composition containing 40 mol% AgCd2GaSe4 and 60 mol% “AgMn2GaSe4”. All the single-phase solid solutions turned out to be photosensitive with the multiplicity of conductivity variation at the 103-Lx illumination ranging from about 10 to 10^3, depending on the specimen composition.
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| first_indexed | 2025-12-07T15:48:56Z |
| format | Article |
| fulltext |
FEATURES OF ELECTRIC AND PHOTOELECTRIC PROPERTIES
FEATURES OF ELECTRIC AND PHOTOELECTRIC
PROPERTIES OF AgCd2−xMnxGaSe4 SOLID SOLUTIONS
V.V. BOZHKO, L.V. BULATETSKA, G.YE. DAVYDUYK, O.V. PARASYUK,
B.P. SACHANYUK, A.P. TRETYAK
Lesya Ukrainka Volyn National University
(13, Volya Ave., Lutsk 43025, Ukraine; e-mail: krsh_ 2@ ukr. net )
PACS 72.80.Tm, 72.40.+w,
72.20.Pa.
c©2010
Temperature dependences of the conductivity coefficient and the
thermal electromotive force, as well as the spectral distribution
of photoconductivity, of AgCd2−xMnxGaSe4 solid solutions with
the isovalent substitution Cd→Mn have been studied. The re-
sults of x-ray phase analysis of the AgCd2−xMnxGaSe4 system
testify that an extensive solid solution with the limiting composi-
tion AgCd0.74Mn1.26GaSe emerges in it. The photoconductivity
of AgCd2−xMnxGaSe4 alloys has been considered, and, by analyz-
ing the position of intrinsic photoconductivity maximum, the band
gap width at T ≈ 297 K has been evaluated. Within the solid so-
lutions range, the gap width increases from about 1.75 eV for pure
AgCd2GaSe4 to 2.3 eV for the composition containing 40 mol%
AgCd2GaSe4 and 60 mol% “AgMn2GaSe4”. All the single-phase
solid solutions turned out to be photosensitive with the multiplic-
ity of conductivity variation at the 103-Lx illumination ranging
from about 10 to 103, depending on the specimen composition.
1. Introduction
The onrush of modern microelectronics demands for
searching novel semiconducting materials, the physical
properties of which would expand the range of tradi-
tional semiconductor applications. Lately, the list of
such materials was appended by complex single crys-
tals of tetradic chalcogenide AgCd2GaS4, which demon-
strate a high photosensitivity in the near infrared range
of electromagnetic radiation [1–3]. In connection with
the crystal lattice asymmetry and wide transparency
windows, AgCd2GaS4 can be practically used as a basis
for the fabrication of nonlinear elements for optoelec-
tronic technique. To expand the application range of
substances belonging to this tetradic phase, the electri-
cal, optical, and photoelectric properties of solid solu-
tions, obtained on the basis of AgCd2GaS4 by substi-
tuting one of the elements of this compound (Ag→Cu,
Cd→(Zn, Mn), Ga→In, and S→(Te, Se)), were studied
in works [4–8].
For the sake of searching for new complex semicon-
ducting phases, we have synthesized and studied some
properties of the related system AgCd2−xMnxGaSe4
with the isovalent Cd→Mn substitution. The results
of x-ray phase analysis of the AgCd2−xMnxGaSe4 sys-
tem testify to that an extensive solid solution emerges
in it. Its limiting composition was determined from
the variation of elementary rhombic cell parameters
(Fig. 1) to be AgCd0.74Mn1.26GaSe4. The specifi-
cation of the crystal structure of the alloy with the
aforementioned composition showed that the crystallo-
graphic position of Cd (4b) in the framework of spa-
tial group Pmn21 is statistically populated with Cd and
Mn atoms, i.e. the specimens belonging to this sys-
tem are disordered alloys. A gradual substitution of
cadmium by manganese results in a reduction of the
elementary cell dimensions owing to a smaller tetra-
hedral ionic radius. At x > 1.26, the alloys con-
tain three phases: AgCd0.74Mn1.26GaSe4, AgGaSe2,
and MnSe. The initial composition of the system
“AgMn2GaSe4” is biphase and contains AgGaSe2 and
MnSe (Fig. 2).
Fig. 1. Dependences of the lattice constants and the unit cell vol-
ume in AgCd2GaSe4–“AgMn2GaSe4” alloys on the solid solution
content at 870 K
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 2 207
V.V. BOZHKO, L.V. BULATETSKA, G.Ye. DAVYDUYK et al.
Fig. 2. Dependence of dark electroconductivity in solid solutions
AgCd2−xMnxGaSe4 on their content at 293 K
2. Experimental Results and Their Discussion
In the present work, we studied the electric, photoelec-
tric, and thermoelectric properties of alloys belonging to
the system AgCd2−xMnxGaSe4 and synthesized by us.
For this purpose, we fabricated specimens of 11 types
with a content step of 10 mol% “AgMn2GaSe4”.
The statistical character of the Cd-atom (the ionic
radius rCd2+ = 0.092 nm) substitution by smaller Mn
atoms (rMn2+ = 0.080 nm) gives rise to a violation in
the periodicity of the electron potential energy in the
lattice and, respectively, to the emergence of tails of the
electron density of states in the semiconductor energy
gap. At the same time, as the substances are complex
phases, they are rich in structural defects of both the
impurity and technological origins, which form energy
levels in the forbidden gap. Therefore, one should ex-
pect that the spectrum of electron states in the alloys
under investigation is similar to those in strongly defec-
tive, disordered, or amorphous semiconductors.
In Fig. 2, the dependence of specific dark electrocon-
ductance σ on the composition of AgCd2−xMnxGaSe4
system at 293 K is shown. In the single-phase range,
the dark conductivity σ ≈ 10−10 − 10−11 (Ω × cm)−1
and decreases with the growth of the “AgMn2GaSe4”
content. Probably, one of the reasons for such a de-
pendence may be an increase of the energy gap width
in alloys, which agrees with the reduction of elementary
cell dimensions at the isovalent substitution of Cd atoms
by Mn ones. All the alloys of the system concerned be-
long to well-compensated semiconductors with a low (at
the measurement error level) value of thermo-emf co-
efficient S in the single-phase range. For parent com-
ponents of the alloy, S = −96 µV/K for AgCd2GaSe4
and +480 µV/K for “AgMn2GaSe4”. A deep location
of the Fermi level EF in the energy gap is responsible
for close contributions made to electroconductivity by
the electron and hole components and, respectively, for
a low S-value, which grows drastically near the three-
phase region boundary. For specimens from the three-
phase region, the experimentally determined values of
thermo-emf coefficient were +29, +500, and +470 µV/K
for compositions of 70, 80, and 90 mol% “AgMn2GaSe4”,
respectively.
The highest figures of merit Z = S2σ/χ, where χ is
the specific heat conductance, are characteristic of three-
phase alloys with large S-values.
The value of the quantity ZT is about 3×10−5 for the
alloy with 90 mol % “AgMn2GaSe4” at a temperature of
293 K. From the aforesaid, it follows that alloys of the
AgCd2−xMnxGaSe4 system cannot be promising mate-
rials for thermoelectrogenerators, for which the value of
ZT falls within the interval 0.1 − 1. But they can be a
component of radiation-resistant temperature-sensitive
thermoelements, where they would form a shoulder of
the conductivity of p-type.
The temperature dependence of the electrocon-
ductivity for single-phase alloys belonging to the
AgCd2−xMnxGaSe4 system, as well as for the majority
of disordered semiconductors, has activation character
[9] and is described by the exponential dependence
σ = σ0 exp
(
−Ea
kT
)
(1)
at high temperatures from room one to T ≤ 400 K.
Here, Ea is the activation energy, and 400 K is the
temperature, to which the specimens were heated up
in our experiments. The determined values of the con-
ductivity activation energy Ea for solid solutions with
various compositions (Fig. 3) falls within the interval
0.4 − 0.63 eV. The corresponding σ0 turned out to be
about 102 (Ω× cm)−1, which, according to the crite-
ria stated in work [9], testifies to the realization of
the electroconductivity mechanism through the ther-
mal excitation of charge carriers from the levels in the
energy gap, which are located near the Fermi level,
onto the level of delocalized states in the allowed en-
ergy band. Attention is attracted by a reduction of
Ea at the transition to solid solutions with the con-
tent of the second component higher than 40 mol%
(Fig. 3). In this content range, an insignificant growth
of dark σ of the specimens is also observed (Fig. 2).
On the basis of this fact, we may assume that cation
sublattice defects related to cadmium ions play the
dominating role in the specimens with low contents of
208 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 2
FEATURES OF ELECTRIC AND PHOTOELECTRIC PROPERTIES
Fig. 3. Dependence of the electroconductivity activation energy in
solid solutions AgCd2−xMnxGaSe4 on their content
Fig. 4. Dependence of the electroconductivity variation multiplic-
ity in the specimens at their illumination at 293 K with white light
on their content
“AgMn2GaSe4” and define the Ea-value there, whereas
defects associated with Mn ions dominate in speci-
mens with the “AgMn2GaSe4” contents higher than
40 mol%.
All the specimens studied by us turned out to be pho-
tosensitive. In Fig. 4, the dependence of the conductivity
variation multiplicity K of alloys at their illumination at
room temperature with white light produced by a halo-
gen lamp on the alloy component content is depicted.
The light exposure of specimens was 103 lx. The pa-
rameter K was determined by the formula K = σC/σT ,
where σC and σT are the specific electroconductances
of the specimen illuminated with light and in darkness,
respectively. As Fig. 4 demonstrates, the most photosen-
sitive (K = 0.9 × 103 − 1.0 × 103) were specimens with
the content in the interval 30−40 mol% “AgMn2GaSe4”.
The reduction of photosensitivity for alloys with
higher contents of the second component (more than
40 mol% “AgMn2GaSe4”) is probably induced by the
growth of their imperfection, when the content comes
closer to the solubility limit. This conclusion is sup-
Fig. 5. Spectral distributions of photoconductivity of in solid
solution AgCd2−xMnxGaSe4 at 293 K for specimens with various
contents: (1 ) 100 mol% AgCd2GaSe4–0 mol% “AgMn2GaSe4”,
(2 ) 70 mol% AgCd2GaSe4–30 mol% “AgMn2GaSe4”, (3 ) 60 mol%
AgCd2GaSe4–40 mol% “AgMn2GaSe4”, (4 ) 40 mol%
AgCd2GaSe4–60 mol% “AgMn2GaSe4”
ported by a weak photosensitivity of three-phase alloys
(Fig. 4) which are characterized by a considerably higher
concentration of structural defects in comparison with
single-phase ones. Similarly to what takes place in other
semiconductors, the structural defects of a crystal lat-
tice evidently play the role of effective centers for the
fast recombination of nonequilibrium charge carriers in
the bands. One may assume that the increase of the al-
loy imperfection near the solubility limit is responsible
for the variations of Ea (Fig. 3) and σ (Fig. 2).
In Fig. 5, the spectral distributions of photoconduc-
tivity (PC) of AgCd2−xMnxGaSe4 alloys in the single-
phase range at 293 K are presented. The character-
istic feature of PC of specimens is a well degenerate
maximum which is probably associated with the in-
trinsic PC. When the “AgMn2GaSe4” content increases,
the intrinsic-PC maximum shifts toward the short-wave
range: from 708 nm in pure AgCd2GaSe4 to 538 nm in
alloys with the composition of 60 mol% AgCd2GaSe4 +
40 mol% “AgMn2GaSe4” (curves 1 to 3 in Fig. 5). The
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 2 209
V.V. BOZHKO, L.V. BULATETSKA, G.Ye. DAVYDUYK et al.
further growth of the second component content gives
rise to a smearing of the PC maximum without any
notable shift of its position, which is typical of defect
systems, and to the appearance of a conspicuous back-
ground given by impurity PC, probably, of the defect
origin (curve 4 in Fig. 5). Making use of the intrin-
sic PC maximum for the evaluation of the energy gap
width in the alloys, we may assert that it grows with
increase in the “AgMn2GaSe4” content in the alloy from
about 1.75 eV (curve 1 in Fig. 5) to 2.3 eV for alloys
at the boundary of the single-phase solid solution exis-
tence range (curve 4 in Fig. 5), which agrees with x-ray
diffraction data, namely, with a reduction of the elemen-
tary cell dimensions at the substitution of Cd atoms in
the alloy by Mn ones.
Thus, on the basis of out research of electric, thermo-
electric, and photo-electric properties of alloys belong-
ing to the AgCd2−xMnxGaSe4 system, it was found that
they are compensated semiconductors with a high photo-
sensitivity in the range of the single-phase solid solution.
The energy gap width in the alloys, which was estimated
from the intrinsic PC maximum, grows, if Cd atoms in
the solution are substituted by Mn ones.
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Nauky 16, 31 (2007).
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Phys. 51, 380 (2006).
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Received 13.04.09.
Translated from Ukrainian by O.I. Voitenko
ОСОБЛИВОСТI ЕЛЕКТРИЧНИХ
ТА ФОТОЕЛЕКТРИЧНИХ ВЛАСТИВОСТЕЙ
ТВЕРДИХ РОЗЧИНIВ AgCd2−xMnxGaSe4
В.В. Божко, Л.В. Булатецька, Г.Є. Давидюк, О.В. Парасюк,
В.П. Сачанюк, А.П. Третяк
Р е з ю м е
Дослiджено температурнi залежностi електропровiдностi, ко-
ефiцiєнт термо-ерс та спектральний розподiл фотопровiд-
ностi твердих розчинiв AgCd2−xMnxGaSe4 з iзовалентним
замiщенням Cd⇒Mn. Згiдно iз рентгенофазовим аналi-
зом у системi AgCd2−xMnxGaSe4 спостерiгається утворен-
ня протяжного твердого розчину, граничний склад якого є
AgCd0,74Mn1,26GaSe4. Проаналiзовано фотопровiднiсть спла-
вiв системи AgCd2−xMnxGaSe4. По максимуму власної фото-
провiдностi оцiнено ширину забороненої зони при T ≈ 297 К.
У межах однофазного твердого розчину вона збiльшується вiд
∼ 1, 75 еВ для 100 мол.% AgCd2GaSe4–0 мол.% “AgMn2GaSe4”
до 2,3 еВ для 40 мол.% AgCd2GaSe4–60 мол.% “AgMn2GaSe4”.
Всi однофазнi твердi розчини фоточутливi з кратнiстю змiни
провiдностi, при освiтленнi 103 лк, що дорiвнює ∼ 101 − 103, в
залежностi вiд компонентного складу зразка.
210 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 2
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| id | nasplib_isofts_kiev_ua-123456789-13384 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 2071-0194 |
| language | Ukrainian |
| last_indexed | 2025-12-07T15:48:56Z |
| publishDate | 2010 |
| publisher | Відділення фізики і астрономії НАН України |
| record_format | dspace |
| spelling | Божко, В.В. Булатецька, Л.В. Давидюк, Г.Є. Парасюк, О.В. Сачанюк, В.П. Третяк, А.П. 2010-11-05T14:07:15Z 2010-11-05T14:07:15Z 2010 Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 / В.В. Божко, Л.В. Булатецька, Г.Є. Давидюк, О.В. Парасюк, В.П. Сачанюк, А.П. Третяк // Укр. фіз. журн. — 2010. — Т. 55, № 2. — С. 208-211. — Бібліогр.: 9 назв. — укр. 2071-0194 PACS 72.80.Tm, 72.40.+w, https://nasplib.isofts.kiev.ua/handle/123456789/13384 621.315.592 Дослiджено температурнi залежностi електропровiдностi, коефiцiєнт термо-ерс та спектральний розподiл фотопровiдностi твердих розчинiв AgCd2-xMnxGaSe4 з iзовалентним замiщенням Cd → Mn. Згiдно iз рентгенофазовим аналiзом у системi AgCd2-xMnxGaSe4 спостерiгається утворення протяжного твердого розчину, граничний склад якого є AgCd0,74Mn1,26GaSe4. Проаналiзовано фотопровiднiсть сплавiв системи AgCd2-xMnxGaSe4. По максимуму власної фотопровiдностi оцiнено ширину забороненої зони при T ≈ 297 К. У межах однофазного твердого розчину вона збiльшується вiд ~ 1, 75 еВ для 100 мол.% AgCd2GaSe4–0 мол.% “AgMn2GaSe4” до 2,3 еВ для 40 мол.% AgCd2GaSe4–60 мол.% “AgMn2GaSe4”. Всi однофазнi твердi розчини фоточутливi з кратнiстю змiни провiдностi, при освiтленнi 103 лк, що дорiвнює ~ 10^1 - 10^3, в залежностi вiд компонентного складу зразка. Исследованы температурная зависимость электропроводности коэффициента термо-эдс и спектральное распределение фотопроводимости твердых растворов AgCd2-xMnxGaSe4 с изовалентным замещением Cd → Mn. В соответствии с рентгенофазовым анализом в системе AgCd2-xMnxGaSe4 наблюдается образование протяженного твердого раствора, предельным составом которого является AgCd0,74Mn1,26GaSe. Проанализирована фотопроводимость сплавов системы AgCd2-xMnxGaSe4. По максимуму собственной фотопроводимости оценена ширина запрещенной зоны при 297 К. В пределах твердого раствора она увеличивается от ~ 1,75 эВ для 100 мол.% AgCd2GaSe4–0 мол.% “AgMn2GaSe4” до 2,3 эВ для 40 мол.% AgCd2GaSe4–60 мол.% “AgMn2GaSe4”. Все однофазные твердые растворы фоточувствительные с кратностью изменения проводимости, при освещении 103 лк, равной ~ 10^1 - 10^3, в зависимости от компонентного состава образца. Temperature dependences of the conductivity coefficient and the thermal electromotive force, as well as the spectral distribution of photoconductivity, of AgCd2-xMnxGaSe4 solid solutions with the isovalent substitution Cd → Mn have been studied. The results of x-ray phase analysis of the AgCd2-xMnxGaSe4 system testify that an extensive solid solution with the limiting composition AgCd0,74Mn1,26GaSe emerges in it. The photoconductivity of AgCd2-xMnxGaSe4 alloys has been considered, and, by analyzing the position of intrinsic photoconductivity maximum, the band gap width at T ≈ 297 K has been evaluated. Within the solid solutions range, the gap width increases from about 1,75 eV for pure AgCd2GaSe4 to 2,3 eV for the composition containing 40 mol% AgCd2GaSe4 and 60 mol% “AgMn2GaSe4”. All the single-phase solid solutions turned out to be photosensitive with the multiplicity of conductivity variation at the 103-Lx illumination ranging from about 10 to 10^3, depending on the specimen composition. uk Відділення фізики і астрономії НАН України Тверде тіло Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 Особенности электрических и фотоэлектрических свойств твердых растворов AgCd2-xMnxGaSe4 Features of Electric and Photoelectric Properties of AgCd2-xMnxGaSe4 Solid Solutions Article published earlier |
| spellingShingle | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 Божко, В.В. Булатецька, Л.В. Давидюк, Г.Є. Парасюк, О.В. Сачанюк, В.П. Третяк, А.П. Тверде тіло |
| title | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 |
| title_alt | Особенности электрических и фотоэлектрических свойств твердых растворов AgCd2-xMnxGaSe4 Features of Electric and Photoelectric Properties of AgCd2-xMnxGaSe4 Solid Solutions |
| title_full | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 |
| title_fullStr | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 |
| title_full_unstemmed | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 |
| title_short | Особливості електричних та фотоелектричних властивостей твердих розчинів AgCd2-xMnxGaSe4 |
| title_sort | особливості електричних та фотоелектричних властивостей твердих розчинів agcd2-xmnxgase4 |
| topic | Тверде тіло |
| topic_facet | Тверде тіло |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/13384 |
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