Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2)
Твердi розчини системи CuInSe2–ZnIn2Se4 належать до напiвпровiдникiв n-типу провiдностi. Дослiджено їх температурнi залежностi електропровiдностi та край оптичного поглинання. Визначено ширину забороненої зони твердого розчину системи CuInSe2–ZnIn2Se4 залежно вiд складу. Також встановлено концентрац...
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2010
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| Cite this: | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) / В.В. Божко, Г.Є. Давидюк, О.В. Парасюк, О.В. Новосад, В.Р. Козер // Укр. фіз. журн. — 2010. — Т. 55, № 3. — С. 313-317. — Бібліогр.: 11 назв. — укр. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860066304286785536 |
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| author | Божко, В.В. Давидюк, Г.Є. Парасюк, О.В. Новосад, О.В. Козер, В.Р. |
| author_facet | Божко, В.В. Давидюк, Г.Є. Парасюк, О.В. Новосад, О.В. Козер, В.Р. |
| citation_txt | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) / В.В. Божко, Г.Є. Давидюк, О.В. Парасюк, О.В. Новосад, В.Р. Козер // Укр. фіз. журн. — 2010. — Т. 55, № 3. — С. 313-317. — Бібліогр.: 11 назв. — укр. |
| collection | DSpace DC |
| description | Твердi розчини системи CuInSe2–ZnIn2Se4 належать до напiвпровiдникiв n-типу провiдностi. Дослiджено їх температурнi залежностi електропровiдностi та край оптичного поглинання. Визначено ширину забороненої зони твердого розчину системи CuInSe2–ZnIn2Se4 залежно вiд складу. Також встановлено концентрацiйну залежнiсть коефiцiєнта термо-ерс, концентрацiї електронiв i холлiвську рухливiсть носiїв заряду.
Твердые растворы системы CuInSe2–ZnIn2Se4 принадлежат к полупроводникам n-типа проводимости. Исследованы их температурные зависимости электропроводимости и край оптического поглощения. Определена ширина запрещенной зоны твердого раствора системы CuInSe2–ZnIn2Se4 в зависимости от состава. Также установлена концентрационная зависимость коэффициента термо-эдс, концентрации электронов и их холловская подвижность.
The temperature dependences of electroconductivity and the optical absorption edge in solid solutions of the system CuInSe2– ZnIn2Se4 belonging to semiconductors with n-conductivity have been studied. The content dependence of the energy gap width in the solutions concerned has been found. The concentration dependences of the electromotive force coefficient, electron concentration, and Hall mobility of charge carriers have been determined.
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V.V. BOZHKO, G.YE. DAVYDUYK, O.V. PARASYUK et al.
ELECTRICAL AND OPTICAL PROPERTIES OF SOLID
SOLUTIONS Cu1−xZnxInSe2 (x = 0.05 − 0.2)
V.V. BOZHKO, G.YE. DAVYDUYK, O.V. PARASYUK, O.V. NOVOSAD,
V.R. KOZER
Lesya Ukrainka Volyn National University
(13, Volya Ave., Lutsk 43025, Ukraine; e-mail: novosadali@ rambler. ru )
PACS 72.80.Tm, 72.20.My,
72.20.Pa
c©2010
The temperature dependences of electroconductivity and the op-
tical absorption edge in solid solutions of the system CuInSe2–
ZnIn2Se4 belonging to semiconductors with n-conductivity have
been studied. The content dependence of the energy gap width
in the solutions concerned has been found. The concentration de-
pendences of the electromotive force coefficient, electron concen-
tration, and Hall mobility of charge carriers have been determined.
1. Introduction
An important place among semiconducting substances is
occupied by chalcogenide compounds with a diamond-
like structure. In particular, they include ternary
AICIIIX2 compounds which are derivative of BIIX (X =
S, Se) ones. Of late years, the interest in ternary chalco-
genide compounds and their alloys has grown up [1].
In this work, solid solutions of the CuInSe2–ZnIn2Se4
system were studied. The ternary compound CuInSe2
and solid solutions on its basis are used as materials for
thin-film heterojunctions in solar cells. However, their
shortcoming is a narrow energy gap (Eg) which corre-
sponds to the quantum energy in a spectral range far
from the sunlight distribution maximum. The applica-
tion scope of compounds of the given class can be ex-
tended by preparing and researching solid solutions in
systems, where the second component is a compound
with a similar structure and a wider energy gap.
Crystalline CuInSe2 has a structure of the chalcopyrite
type (the space group I – 4̄2d) with a cation–anion order-
ing that corresponds to the tetrahedral coordination of
atoms in the crystal lattice. The cation-to-anion ratio in
ZnIn2Se4 compounds, which are the second component
(with a wider energy gap) of the solid solution under con-
sideration, is 3:4. These materials are cation-defective,
which is characteristic of BIICIII
2 X4 compounds.
2. Preparation of Solid Solutions and Methods
of Their Research
To find the regions of solid-phase solubility in the system
CuInSe2–ZnIn2Se4, we fabricated 21 specimens with a
content step of 5 mol% ZnIn2Se4. High-purity elements
(with a purity grade not less than 99.99 wt.%) were used
for synthesis. Evacuated quartz ampoules filled with
a blend were heated up in a shaft furnace to 1470 K.
They were kept at this temperature for an hour and then
cooled down to 870 K at a rate of 10−15 K/h. The alloys
obtained were annealed for 500 h. Afterward, they were
hardened in cold water. The fabricated specimens were
studied by x-ray phase analysis (an x-ray diffractome-
ter DRON 4-13, CuKα radiation). The elementary cell
parameters were calculated using the PDWin 2 software
package. The solid-solution ranges were determined by
analyzing the variation of elementary cell parameters
(Fig. 1). No intermediate phases were found in the sys-
tem. The formation of solid solutions on the basis of
components of the system concerned was found for the
content intervals 0− 22 and 78− 100 mol% ZnIn2Se4 at
the annealing temperature.
To study the mechanism of formation of the solid so-
lutions under investigation, we used the method of x-ray
diffraction analysis. As an example, the experimental,
calculated, and difference diffraction patterns of alloy
Cu0.8Zn0.2InSe2 are shown in Fig. 2. A heterovalent sub-
stitution of copper atoms by zinc ones at the crystallo-
graphic position 4a was found. At the substitution, one
atom of divalent zinc substitutes two atoms of univalent
copper with the formation of tetrahedral voids, whose
number is proportional to the number of zinc atoms in
the emerged structure (2Cu←→ Zn+�). Such a type of
the formation of a solid solution gives rise to the appear-
ance of cation-vacancy imperfections in the chalcopyrite
structure, and the degree of this imperfection increases
with the solid solution extension.
Hence, the features of the formation of a solid solu-
tion enable us to assert that zinc atoms available in the
312 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 3
ELECTRICAL AND OPTICAL PROPERTIES
Fig. 1. Elementary cell parameters for various cross-sections of the
CuInSe2–ZnIn2Se4 system at 870 K
solution structure have to affect the physical properties
of compounds owing to the emergence of cation vacan-
cies which are not observed in the chalcopyrite CuInSe2
structure.
For the growing of solid-solution crystals on the ba-
sis of CuInSe2, the horizontal variant of the Bridgman–
Stockbarger method was chosen. Polycrystalline 8-g
specimens of alloys, preliminarily synthesized of high-
purity elements, were sealed in evacuated quartz am-
poules with a conic end and placed into a furnace in-
clined at an angle of 10◦. After the melts had been
heated up to 1470 K, they were homogenized for 4 h.
Then, the furnace was started to move with a velocity
of 2 cm/day (the growth containers remained motion-
less). The temperature gradient at the crystallization
front did not exceed 14 K/cm. After the crystals had
achieved the isothermal zone at 870 K, they were an-
nealed for 250 h and then cooled down to room tem-
perature at a rate of 100 K/day. As a result, we ob-
tained single crystals or blocks composed of single crys-
tals with the dimensions suitable for physical experi-
ments. Electric measurements were carried out using
the specimens fabricated in the form of regular paral-
lelepipeds (3− 8)× (0.5− 1)× (1− 2) mm3 in size with
deposited contacts made of indium or gallium-indium eu-
tectic mixture. For optical measurements, we used crys-
tals with plane-parallel surfaces of optical quality and
0.06−0.1 mm in thickness or thin chips. At voltages be-
low 10 V, all electric contacts had an Ohmic character.
The specimen surfaces were mechanically polished using
diamond pastes with various granular sizes.
Thermoelectric and electric properties were studied on
standard installations in the dc signal mode. The light
absorption coefficient (K) spectra were measured on a
MDR-206 monochromator with a sensor on the basis of
Fig. 2. Experimental, calculated, and difference diffraction pat-
terns of the Cu0.8Zn0.2InSe2 solid solution
a silicon photodetector. The energy gap width Eg was
estimated as the energy of light quanta hν, at which
K = 350 cm−1 at the edge of the band of characteristic
optical transitions.
3. Experimental Results and Their Discussion
It was found experimentally that the specific dark elec-
troconductance σ of the crystals of solid solutions on the
basis of CuInSe2 compound decreases, if the content of
the second component (ZnIn2Se4) increases (Fig. 3,a).
According to the sign of thermo-emf coefficient, all spec-
imens had conductivity of the n-type. The value of σ
remained practically constant within the temperature in-
terval 280 − 318 K close to room temperature. A large
value of σ ≈ (3.3 ÷ 3.6) Ω−1cm−1 for solid solutions
with the contents 5 − 10 mol% ZnIn2Se4 (Fig. 3,a) and
its temperature independence can testify that the corre-
sponding state of crystals is close to a degenerate one. It
should be noted that, in the CuInSe2 case, the degener-
ation emerges at an electron concentration higher than
1017 cm−3 (σ ≈ (101 ÷ 102) Ω−1cm−1) [2], which agrees
well with our results.
To determine the thermo-emf coefficient α, we took
advantage of the relevant equation for degenerate semi-
conductors [2],
α =
k2π2T
3eEf
(
3r0 + T
r0 + T
)
, (1)
where r0 is a parameter independent of the tempera-
ture, and Ef is the Fermi level position. The calcu-
lated value α ≈ 320 µV/K turned out very close to that
(α ≈ 330 µV/K) found experimentally for crystals with
the content 5 − 10 mol% ZnIn2Se4 at 292 K (Fig. 3,b).
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 3 313
V.V. BOZHKO, G.YE. DAVYDUYK, O.V. PARASYUK et al.
Fig. 3. Content dependences of (a) specific dark electroconduc-
tance, (b) thermo-emf coefficient, and (c) energy gap width of solid
solutions of the CuInSe2–ZnIn2Se4 system at 292 K
In this case, to put the theoretical and experimental α-
values into agreement, we adopted that r0 = 20 and
Ef = EC − 0.05. Such values of parameters r0 and Ef
turned out identical to their counterparts for degenerate
CuInSe2 films [2].
As is known [3], the figure of merit or the efficiency of
a thermoelement is determined by the formula
Z =
α2σ
ℵ
, (2)
where ℵ is the specific heat conductance. The latter con-
sists of the lattice heat conductivity ℵg and the electron
heat conductivity ℵe:
ℵ = ℵg + ℵe. (3)
In the first approximation, the heat conductivity of a
crystal lattice ℵg does not depend on the concentration
of free charge carriers n, whereas ℵe is proportional to
n. To estimate the specific electron heat conductance,
we took advantage of the equation describing ℵe for de-
generate semiconductors [4],
ℵe =
π2
3e
k2σT. (4)
For our low-resistance alloys at 300 K, we obtained
ℵe ≈ 2.8 × 10−5 J/(s× cm×K). According to the
data of work [5], the specific heat conductance of the
CuInSe2 single-crystal lattice amounts to ℵg ≈ 2.9 ×
10−2 J/(s× cm×K), i.e. ℵe/ℵg ≈ 10−3.
It should be noted that similar results are valid for
other heavily doped semiconductors as well [6]. For
instance, for n-silicon with a donor concentration of
8 × 1019 cm−3, the ratio ℵe/ℵg ≈ 6 × 10−3. Therefore,
we may assert that, for the studied crystals,
ℵ = ℵg. (5)
Taking the aforesaid into account, we obtained ZT ≈
4 × 10−3 for crystals with the contents of 5 − 10 mol%
ZnIn2Se4 in the range of room temperatures. For alloys
with higher contents of ZnIn2Se4, the ZT -value is lower.
Hence, crystals of solid solutions on the basis of
CuInSe2 have a high α-value, and they can be used
as materials for sensitive thermal sensors. At the same
time, they are not promising materials for thermoelec-
tric generators, for which the value of ZT falls within
the interval 0.1− 1.
The increase of the ZnIn2Se4 content in the alloys con-
cerned is accompanied by a decrease of their σ (Fig. 3,a).
This can be related to an increase of the energy gap
width Eg (Fig. 3,c). At 292 K, the latter is equal to
0.86 eV for CuInSe2 [7] and about 2 eV for ZnIn2Se4 [5].
In the alloys, a certain role is played by the variation
of their defect structure. As was indicated above, the
increase of the Zn content gives rise to the concentra-
tion growth of cation vacancies which play the role of
acceptor centers.
The study of the Hall effect enabled us to deter-
mine the concentration n and the mobility µ of major-
ity charge carriers for specimens (see Table 1). In work
[5], the value µ ≈ 1000 cm2/(V × s) was reported for
the Hall mobility of charge carriers in a CuInSe2 single
crystal. A low value of µ for electrons in the alloys (Ta-
ble 1) testifies to a high imperfection of the latter, which
confirms a conclusion drawn earlier. Moreover, the high
imperfection of the crystals under consideration, in turn,
is evidently responsible for their low photosensitivity.
T a b l e 1. Key parameters of CuInSe2–ZnIn2Se4 alloys
at T ≈ 292 K
mol%, Eg , R, n, µ, σ, α,
ZnIn2Se4 eV cm3/С cm−3 cm2/V·s (Ω·cm)−1 µV/K
5 1 19.3 3.82·1017 59 3.6 330
10 1.02 13.3 5.56×1017 37 3.3 370
15 1.06 1097 6.72×1015 130 0.14 720
20 1.08 8760 8.40×1014 70 9.2×10−3 950
314 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 3
ELECTRICAL AND OPTICAL PROPERTIES
Fig. 4. Dependences of the transverse magnetoresistance Δρ/ρ0
on the magnetic induction
Magnetoresistance researches of nondegenerate speci-
mens led to approximately the same values of electron
mobility. In Fig. 4, the dependences of the transverse
magnetoresistance of specimens on the magnetic field in-
duction at 292 K are given. In a broad field interval, the
relative variation of the magnetoresistance is described
well by the square-law dependence [8]
Δρ/ρ0 = µ2B2(C −A2). (6)
In order to put the experimental results in agreement
with formula (6), we took C − A2 ≈ 7, which is close
to the characteristic value obtained at the electron scat-
tering by ionized impurities [8]. For degenerate speci-
mens, we did not succeed in measuring their magnetore-
sistances owing to their very small values.
In Fig. 5, the energy dependences of the light absorp-
tion coefficient K(ν) near the edge of own optical tran-
sitions (EOOT) in the crystals concerned are presented.
As follows from the figure, the dependence K(ν) is de-
scribed well by the Urbach rule [9], which testifies that
T a b l e 2. Parameters of the characteristic absorption
band edge of solid solutions CuInSe2–ZnIn2Se4 at T ≈
292 K
Specimen No. mol%, ZnIn2Se4 Δ0, eV Eg , eV
1 5 0.028 1.00
2 10 0.030 1.02
3 15 0.034 1.06
4 20 0.036 1.08
Fig. 5. Energy distributions of the light absorption coefficient in
solid solutions CuInSe2–ZnIn2Se4 at 292 K
the tails of the density of states, stemming from the crys-
tal lattice imperfection, take part in the formation of
optical transitions:
K(ν) ∼ exp
(
−Eg0 − hν
Δ0
)
, (7)
where Eg0 is a constant proportional to the energy gap
width at 0 K; and Δ0 is a characteristic energy which
determines a degree of the EOOT smearing, being a cri-
terion of the crystal lattice disordering.
The values of Δ0 determined for specimens with var-
ious contents from the experimental dependence (7) are
listed in Table 2. A large Δ0-value, close to that in
disordered semiconductors [10], evidences for a high im-
perfection of compounds which grows (it is reflected by
the growth of Δ0) with increase in the ZnIn2Se4 content.
Such a behavior agrees well with a conclusion made ear-
lier on an increase of the cation vacancy concentration
in the crystals of solid solutions on the basis of CuInSe2
with increase in the second component content.
As is known [9], there is a relation between Δ0 and the
concentration of charged point defects nt responsible for
the absorption edge smearing, which is expressed by the
formula
Δ0 = 2, 2
(
nta
3
b
)2/5
Eb, (8)
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 3 315
V.V. BOZHKO, G.YE. DAVYDUYK, O.V. PARASYUK et al.
where ab = ε~2/me2 is the Bohr radius of an electron,
and Eb = mee
4/2ε2~2 is the Bohr energy. Making use of
the experimentally determined Δ0-value, we evaluated
nt for single-charged centers. In so doing, we assumed
the parameter ε ≈ 11.6 and the effective electron mass
me ≈ 0.2m0 to be the same as that in the single crystals
of ZnSe which is an analog of ternary compounds. We
obtained the values of nt falling within the interval (1÷
3)× 1019 cm−3 for various specimens.
The crystals under investigation are characterized by
a considerable light absorption in the range adjacent to
EOOT (Fig. 5). Such an absorption of light is caused
by large-scale defects in the crystal lattice which gen-
erate potential relief perturbations: dislocations, defect
aggregations, twin boundaries, and others [11]. Such a
phenomenon may testify to the existence of large defect
complexes responsible for the near-edge absorption and
the dispersion of light which reduce the crystal trans-
parency in this spectral range. It should be noted that
some authors [5] arrived at the conclusion on the exis-
tence of large complexes formed by anions around cation
vacancies in AIIBIII
2 CIV
4 compounds.
4. Conclusions
Solid solutions CuInSe2–ZnIn2Se4 belong to semiconduc-
tors with conductivity of the n-type. A high imper-
fection makes them closer to disordered systems, which
manifests itself in some features of electric and optical
parameters of those compounds. The energy gap width
in CuInSe2–ZnIn2Se4 compounds and its dependence on
the component content have been determined. Within
the limits of the existence of a homogeneous solid solu-
tion, the gap width was demonstrated to grow smoothly
with increase in the second component content (with a
wider energy gap). The dependences of the electron con-
centration and the electron Hall mobility on the solution
content have been found.
1. V.B. Lazarev, Z.Z. Kim, E.Yu. Peresh, and E.E. Sem-
rad, Complex Chalcogenides of the Systems AI-B II-CVI
2
(Metallurgiya, Moscow, 1993) (in Russian).
2. A. Amara, A. Drici, and M. Guerioune, Phys. Status
Solidi A 2, 195 (2003).
3. V.V. Pasynkov, L.K. Chirkin, and A.D. Shishkov, Semi-
conductor Devices (Vysshaya Shkola, Moscow, 1973) (in
Russian).
4. A.I. Anselm, Introduction to Semiconductor Theory
(Prentice-Hall, Englewood Cliffs, NJ, 1981).
5. N.A. Goryunova, Complex Diamond-Like Semiconduc-
tors (Sovetskoe Radio, Moscow, 1968) (in Russian).
6. V.I. Fistul, Heavily Doped Semiconductors (Plenum
Press, New York, 1969).
7. P.I. Baranskii, V.P. Klochkov, and I.V. Potykevich, Semi-
conductor Electronics. Reference Book (Naukova Dumka,
Kyiv, 1975) (in Russian).
8. P.S. Kireev, Semiconductor Physics (Mir Publishers,
Moscow, 1978).
9. V.L. Bonch-Bruevich, R. Enderlein, B. Esser, R. Keiper,
A.G. Mironov, and I.P. Zvyagin, Elektronentheorie Un-
geordneter Halbleiter (Wissenschaften, Berlin, 1984).
10. I.A. Vainshtein, A.F. Zatsepin, V.S. Korotov, and
Yu.V. Shchapova, Fiz. Tverd. Tela 42, 2 (2000).
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lakh, Fiz. Tekh. Poluprovodn. 24, 1 (1990).
Received 30.08.09.
Translated from Ukrainian by O.I. Voitenko
ВИГОТОВЛЕННЯ, ЕЛЕКТРИЧНI ТА ОПТИЧНI
ВЛАСТИВОСТI ТВЕРДИХ РОЗЧИНIВ
Cu1−xZnxInSe2 (x = 0, 05− 0, 2)
В.В. Божко, Г.Є. Давидюк, О.В. Парасюк, О.В. Новосад,
В.Р. Кoзер
Р е з ю м е
Твердi розчини системи CuInSe2–ZnIn2Se4 належать до напiв-
провiдникiв n-типу провiдностi. Дослiджено їх температурнi
залежностi електропровiдностi та край оптичного поглинання.
Визначено ширину забороненої зони твердого розчину систе-
ми CuInSe2–ZnIn2Se4 залежно вiд складу. Також встановлено
концентрацiйну залежнiсть коефiцiєнта термо-ерс, концентра-
цiї електронiв i холлiвську рухливiсть носiїв заряду.
316 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 3
|
| id | nasplib_isofts_kiev_ua-123456789-13403 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 2071-0194 |
| language | Ukrainian |
| last_indexed | 2025-12-07T17:07:52Z |
| publishDate | 2010 |
| publisher | Відділення фізики і астрономії НАН України |
| record_format | dspace |
| spelling | Божко, В.В. Давидюк, Г.Є. Парасюк, О.В. Новосад, О.В. Козер, В.Р. 2010-11-08T14:32:04Z 2010-11-08T14:32:04Z 2010 Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) / В.В. Божко, Г.Є. Давидюк, О.В. Парасюк, О.В. Новосад, В.Р. Козер // Укр. фіз. журн. — 2010. — Т. 55, № 3. — С. 313-317. — Бібліогр.: 11 назв. — укр. 2071-0194 PACS 72.80.Tm, 72.20.My, 72.20.Pa https://nasplib.isofts.kiev.ua/handle/123456789/13403 621.315.592 Твердi розчини системи CuInSe2–ZnIn2Se4 належать до напiвпровiдникiв n-типу провiдностi. Дослiджено їх температурнi залежностi електропровiдностi та край оптичного поглинання. Визначено ширину забороненої зони твердого розчину системи CuInSe2–ZnIn2Se4 залежно вiд складу. Також встановлено концентрацiйну залежнiсть коефiцiєнта термо-ерс, концентрацiї електронiв i холлiвську рухливiсть носiїв заряду. Твердые растворы системы CuInSe2–ZnIn2Se4 принадлежат к полупроводникам n-типа проводимости. Исследованы их температурные зависимости электропроводимости и край оптического поглощения. Определена ширина запрещенной зоны твердого раствора системы CuInSe2–ZnIn2Se4 в зависимости от состава. Также установлена концентрационная зависимость коэффициента термо-эдс, концентрации электронов и их холловская подвижность. The temperature dependences of electroconductivity and the optical absorption edge in solid solutions of the system CuInSe2– ZnIn2Se4 belonging to semiconductors with n-conductivity have been studied. The content dependence of the energy gap width in the solutions concerned has been found. The concentration dependences of the electromotive force coefficient, electron concentration, and Hall mobility of charge carriers have been determined. uk Відділення фізики і астрономії НАН України Тверде тіло Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) Изготовление, электрические и оптические свойства твердых растворов Cu1-xZnxInSe2 (x = 0,05 – 0,2) Electrical and Optical Properties of Solid Solutions Cu1-xZnxInSe2 (x = 0.05 – 0.2) Article published earlier |
| spellingShingle | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) Божко, В.В. Давидюк, Г.Є. Парасюк, О.В. Новосад, О.В. Козер, В.Р. Тверде тіло |
| title | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) |
| title_alt | Изготовление, электрические и оптические свойства твердых растворов Cu1-xZnxInSe2 (x = 0,05 – 0,2) Electrical and Optical Properties of Solid Solutions Cu1-xZnxInSe2 (x = 0.05 – 0.2) |
| title_full | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) |
| title_fullStr | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) |
| title_full_unstemmed | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) |
| title_short | Виготовлення, електричні та оптичні властивості твердих розчинів Cu1-xZnxInSe2 (x = 0,05 – 0,2) |
| title_sort | виготовлення, електричні та оптичні властивості твердих розчинів cu1-xznxinse2 (x = 0,05 – 0,2) |
| topic | Тверде тіло |
| topic_facet | Тверде тіло |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/13403 |
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