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Semiconductor surfaces structurization induced by ultrasound

Gallium arsenide and silicon substrates were exposed to cavitation impact induced by focusing a high frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods as well as energy dispersive X-ray spectroscopy were used for analysis of the surface morphology and chemical...

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Bibliographic Details
Published in:	Functional Materials
Date:	2012
Main Author:	Savkina, R.K.
Format:	Article
Language:	English
Published:	НТК «Інститут монокристалів» НАН України 2012
Subjects:	Characterization and properties
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/134037
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Semiconductor surfaces structurization induced by ultrasound / R.K. Savkina // Functional Materials. — 2012. — Т. 19, № 1. — С. 38-43. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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