VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate
Using X-ray reflectometry method, the kinektics of solid state reactions at the surface of layered thin film nickel/Sisub system (effective nickel thickness 15 and 45 nm) under VUV irradiation of 8≤hv≤1.8 eV energy was studied. Nickel and nickel oxide layers have shown no changes both in thickness a...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2006 |
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НТК «Інститут монокристалів» НАН України
2006
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| Zitieren: | VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate / I.F. Mikhailov, S.V. Malykhin , S.S. Borisova , L.P. Fomina // Functional Materials. — 2006. — Т. 13, № 3. — С. 381-386. — Бібліогр.: 28 назв. — англ. |
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Mikhailov, I.F. Malykhin, S.V. Borisova, S.S. Fomina, L.P. 2018-06-11T19:29:25Z 2018-06-11T19:29:25Z 2006 VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate / I.F. Mikhailov, S.V. Malykhin , S.S. Borisova , L.P. Fomina // Functional Materials. — 2006. — Т. 13, № 3. — С. 381-386. — Бібліогр.: 28 назв. — англ. https://nasplib.isofts.kiev.ua/handle/123456789/134056 Using X-ray reflectometry method, the kinektics of solid state reactions at the surface of layered thin film nickel/Sisub system (effective nickel thickness 15 and 45 nm) under VUV irradiation of 8≤hv≤1.8 eV energy was studied. Nickel and nickel oxide layers have shown no changes both in thickness and sesity. As a result of VUV stimulated silicon diffusion from the substrate and of its reaction with nitrogen, a new layer of silicon nitride with of (3.2...3.4) g*cm⁻³ desity in formed at the nickel film surface. The silicon nitride formation reaction, where nickel acts as a catalyst, is of zero order typical of radiation-(photo)-chemical processes and stops at the layer thickness about 1.5 nm. After aging in air, the surface layer density decreases down to 2.3 g*cm⁻³ and thickness increases to about 25 nm due to oxidation. Repeated cycles of irradiation and oxidation result in degradation of the film-substrate system due to breakink the film adhesion en НТК «Інститут монокристалів» НАН України Functional Materials VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate Твердофазні реакції на поверхні наношарів нікелю, стимульовані ВУФ опроміненням Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate |
| spellingShingle |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate Mikhailov, I.F. Malykhin, S.V. Borisova, S.S. Fomina, L.P. |
| title_short |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate |
| title_full |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate |
| title_fullStr |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate |
| title_full_unstemmed |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate |
| title_sort |
vuv stimulated solid-phase reactions on the surface on ni nano-layers on si substrate |
| author |
Mikhailov, I.F. Malykhin, S.V. Borisova, S.S. Fomina, L.P. |
| author_facet |
Mikhailov, I.F. Malykhin, S.V. Borisova, S.S. Fomina, L.P. |
| publishDate |
2006 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Твердофазні реакції на поверхні наношарів нікелю, стимульовані ВУФ опроміненням |
| description |
Using X-ray reflectometry method, the kinektics of solid state reactions at the surface of layered thin film nickel/Sisub system (effective nickel thickness 15 and 45 nm) under VUV irradiation of 8≤hv≤1.8 eV energy was studied. Nickel and nickel oxide layers have shown no changes both in thickness and sesity. As a result of VUV stimulated silicon diffusion from the substrate and of its reaction with nitrogen, a new layer of silicon nitride with of (3.2...3.4) g*cm⁻³ desity in formed at the nickel film surface. The silicon nitride formation reaction, where nickel acts as a catalyst, is of zero order typical of radiation-(photo)-chemical processes and stops at the layer thickness about 1.5 nm. After aging in air, the surface layer density decreases down to 2.3 g*cm⁻³ and thickness increases to about 25 nm due to oxidation. Repeated cycles of irradiation and oxidation result in degradation of the film-substrate system due to breakink the film adhesion
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| url |
https://nasplib.isofts.kiev.ua/handle/123456789/134056 |
| citation_txt |
VUV stimulated solid-phase reactions on the surface on Ni nano-layers on Si substrate / I.F. Mikhailov, S.V. Malykhin , S.S. Borisova , L.P. Fomina // Functional Materials. — 2006. — Т. 13, № 3. — С. 381-386. — Бібліогр.: 28 назв. — англ. |
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