Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals

Influence of γ-irradiation on the kinetic parameters of indium-alloyed cadmium antimonide single crystals has been studied. The conductivity and the Hall effect were measured, thus obtaining the dose and temperature dependences for concentration of charge carriers and their mobility. A sharp increas...

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Published in:Functional Materials
Date:2006
Main Author: Koval, Yu.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/134059
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals / Yu.V. Koval // Functional Materials. — 2006. — Т. 13, № 3. — С. 397-399. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-134059
record_format dspace
spelling Koval, Yu.V.
2018-06-11T20:06:23Z
2018-06-11T20:06:23Z
2006
Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals / Yu.V. Koval // Functional Materials. — 2006. — Т. 13, № 3. — С. 397-399. — Бібліогр.: 5 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/134059
Influence of γ-irradiation on the kinetic parameters of indium-alloyed cadmium antimonide single crystals has been studied. The conductivity and the Hall effect were measured, thus obtaining the dose and temperature dependences for concentration of charge carriers and their mobility. A sharp increase of charge carrier mobility has been found in the crystals irradiated at the doses up to 4•10¹⁸ γ-quanta per сm², which is explained by the presence of the "small dose effect ". It is noted that the increase of charge carrier mobility observed in this work is due not to the crystal ordering increase caused by the irradiation but to a decrease in the efficiency of charge carrier dispersion on ionic residues of the impurity during partial charge neutralization by the oppositely charged defects.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
Вплив γ-опромінеиня на кінетичиі ефекти у монокристалах антимоніду кадмію, легованих індіем
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
spellingShingle Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
Koval, Yu.V.
title_short Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
title_full Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
title_fullStr Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
title_full_unstemmed Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
title_sort influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals
author Koval, Yu.V.
author_facet Koval, Yu.V.
publishDate 2006
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Вплив γ-опромінеиня на кінетичиі ефекти у монокристалах антимоніду кадмію, легованих індіем
description Influence of γ-irradiation on the kinetic parameters of indium-alloyed cadmium antimonide single crystals has been studied. The conductivity and the Hall effect were measured, thus obtaining the dose and temperature dependences for concentration of charge carriers and their mobility. A sharp increase of charge carrier mobility has been found in the crystals irradiated at the doses up to 4•10¹⁸ γ-quanta per сm², which is explained by the presence of the "small dose effect ". It is noted that the increase of charge carrier mobility observed in this work is due not to the crystal ordering increase caused by the irradiation but to a decrease in the efficiency of charge carrier dispersion on ionic residues of the impurity during partial charge neutralization by the oppositely charged defects.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/134059
fulltext
citation_txt Influence of γ-irradiation on kinetic effects in indium-alloyed cadmium antimonide single crystals / Yu.V. Koval // Functional Materials. — 2006. — Т. 13, № 3. — С. 397-399. — Бібліогр.: 5 назв. — англ.
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first_indexed 2025-11-24T06:23:21Z
last_indexed 2025-11-24T06:23:21Z
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