Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field

Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field

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Veröffentlicht in:Functional Materials
Datum:2010
Hauptverfasser: Shtan'ko, A.D., Litvinova, M.B., V.V., Kurak
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2010
Schlagworte:
Characterization and properties
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/134161
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field / A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Functional Materials. — 2010. — Т. 17, № 1. — С. 46-51. — Бібліогр.: 21 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-134161
record_format dspace
spelling Shtan'ko, A.D.
Litvinova, M.B.
V.V., Kurak
2018-06-12T16:28:39Z
2018-06-12T16:28:39Z
2010
Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field / A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Functional Materials. — 2010. — Т. 17, № 1. — С. 46-51. — Бібліогр.: 21 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/134161
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
Зниження інтенсивності екситонного випромінювання під впливом слабкого електричного поля у монокристалах компенсованого арсеніду гелію
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
spellingShingle Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
Shtan'ko, A.D.
Litvinova, M.B.
V.V., Kurak
Characterization and properties
title_short Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
title_full Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
title_fullStr Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
title_full_unstemmed Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
title_sort decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field
author Shtan'ko, A.D.
Litvinova, M.B.
V.V., Kurak
author_facet Shtan'ko, A.D.
Litvinova, M.B.
V.V., Kurak
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2010
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Зниження інтенсивності екситонного випромінювання під впливом слабкого електричного поля у монокристалах компенсованого арсеніду гелію
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/134161
citation_txt Decrease of exciton radiation intensity in compensated gallium arsenide single crystals under influence of low electric field / A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Functional Materials. — 2010. — Т. 17, № 1. — С. 46-51. — Бібліогр.: 21 назв. — англ.
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first_indexed 2025-12-07T21:00:29Z
last_indexed 2025-12-07T21:00:29Z
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