Crystallization mechanism control during epitaxy from solution-melt

Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively...

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Bibliographic Details
Published in:Functional Materials
Date:2006
Main Authors: Baganov, Ye.O., Shutov, S.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/134185
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Crystallization mechanism control during epitaxy from solution-melt / Ye.O. Baganov, S.V. Shutov // Functional Materials. — 2006. — Т. 13, № 3. — С. 438-442. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Main problems appearing during heteroepitaxy from solution-melts and requirements to time-temperature profiles at the crystallization front have been considered. The substrate cooling possibility by gas feeding to the reactor from outside to provide the crystallization conditions that consecutively combine properties both pulse and quasi-equilibrium conditions growth methods dare shown. A model of heat and mass transfer for a priori determination of the cooling gas consumption has been examined experimentally.
ISSN:1027-5495