Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник
Дослiджено вплив пружних деформацiй, що виникають як за рахунок невiдповiдностi параметрiв ґраток контактуючих напiвпровiдникових матерiалiв, так i в околi кластера дефектiв мiжвузловинного кадмiю у легованiй напiвпровiдниковiй пiдкладцi CdTe, на iнжекцiю електронiв в iзолюючий шар структури метал–н...
Збережено в:
| Дата: | 2010 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
Відділення фізики і астрономії НАН України
2010
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/13435 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник / Р.М. Пелещак, О.В. Кузик, О.О. Даньків // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 437-442. — Бібліогр.: 13 назв. — укр. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1859905191587872768 |
|---|---|
| author | Пелещак, Р.М. Кузик, О.В. Даньків, О.О. |
| author_facet | Пелещак, Р.М. Кузик, О.В. Даньків, О.О. |
| citation_txt | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник / Р.М. Пелещак, О.В. Кузик, О.О. Даньків // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 437-442. — Бібліогр.: 13 назв. — укр. |
| collection | DSpace DC |
| description | Дослiджено вплив пружних деформацiй, що виникають як за рахунок невiдповiдностi параметрiв ґраток контактуючих напiвпровiдникових матерiалiв, так i в околi кластера дефектiв мiжвузловинного кадмiю у легованiй напiвпровiдниковiй пiдкладцi CdTe, на iнжекцiю електронiв в iзолюючий шар структури метал–нелегований напiвпровiдник ZnxCd1-xTe–напiвпровiдникова пiдкладка n-CdTe.
Исследовано влияние упругих деформаций, вызванных как несоответствием параметров решеток контактирующих полупроводниковых материалов, так и наличием кластера дефектов междоузельного кадмия в легированной полупроводниковой подложке CdTe, на инжекцию электронов в изолирующий слой структуры металл–нелегированный полупроводник ZnxCd1-xTe–полупроводниковая подложка n-CdTe.
The influence of elastic deformations that arise owing to a mismatch between the lattice parameters of contacting semiconductor materials and in a vicinity of the defect cluster induced by interstitial cadmium in a doped semiconductor CdTe substrate on the electron injection into the insulating layer of the metal–undoped ZnxCd1-xTe semiconductor–n-CdTe semiconductor substrate structure has been studied.
|
| first_indexed | 2025-12-07T15:59:28Z |
| format | Article |
| fulltext |
R.M. PELESHCHAK, O.V. KUZYK, O.O. DAN’KIV
INFLUENCE OF DEFORMATION EFFECTS
ON ELECTRICAL PROPERTIES
OF METAL–SEMICONDUCTOR–DOPED
SEMICONDUCTOR STRUCTURE
R.M. PELESHCHAK, O.V. KUZYK, O.O. DAN’KIV
Ivan Franko Drogobych State Pedagogical University
(24, Ivan Franko Str., Drogobych 82100, Ukraine; e-mail: peleshchak@ rambler. ru )
PACS 61.72.JJ
c©2010
The influence of elastic deformations that arise owing to a mis-
match between the lattice parameters of contacting semiconduc-
tor materials and in a vicinity of the defect cluster induced by
interstitial cadmium in a doped semiconductor CdTe substrate
on the electron injection into the insulating layer of the metal–
undoped ZnxCd1−xTe semiconductor–n-CdTe semiconductor sub-
strate structure has been studied.
1. Introduction
Recently, when developing semiconductor devices, con-
tacts between metal and semiconductor with an inter-
mediate undoped i-layer [1] have got a wide application,
in particular, for the detection of high-frequency signals
[2] and the fabrication of high-voltage pulse p − i − n
diodes [3].
In work [4], a self-consistent analytical solution was
obtained in the diffusion-drift approximation for the
problem of charge carrier injection into a finite-thickness
insulating i-layer in metal–i-layer–heavily doped semi-
conductor substrate structures. The approach proposed
by the authors takes into account both bulk effects,
which are associated with the current confinement by
a space charge, and contact phenomena at the bound-
aries of the undoped semiconductor i-layer. However,
the model proposed by the authors of work [4] does not
make allowance for the influence of deformation effects,
which can be considerable in the cases where a mismatch
between the lattice parameters of contacting semicon-
ductor materials (CdTe/ZnTe, GaAs/InAs) is large (up
to 6–7%), and the concentration of point defects is high
(Nd > 1017 cm−3).
As was shown in works [5–8], when the concentra-
tion of defects (interstitial atoms and vacancies) ex-
ceeds some critical value, their interaction with the self-
consistent field of deformation gives rise to a formation
of ordered defect-deformation structures (clusters and
periodic structures). The presence of defect clusters in
semiconductor materials substantially affects their elec-
trophysical and optical properties. In particular, as was
shown in works [9, 10], clusters of interstitial Cdi’s are
fast channels of recombination in CdS. In work [8], con-
ditions for purifying the CdTe semiconductor bulk from
clusters formed by ionized interstitial Cdi were found,
and the influence of an external electric field on the clus-
ter size was analyzed.
Owing to the self-consistency of the electron-
deformation coupling, a non-uniform deformation, which
emerges due to the presence of defect clusters and the
mismatch between the lattice parameters of contacting
materials in metal–i-layer–heavily doped semiconductor
structures, results in considerable modifications of spa-
tial distributions of charge carrier concentration, elec-
trostatic potential ϕ(x), and electric field E(x); which
is reflected, in particular, in current-voltage characteris-
tics (CVCs) of such structures. An important matter is
how to predict the variation of electric properties under
the influence of mechanical stresses and how to establish
conditions, under which the influence of external factors
that change a strained state of the semiconductor struc-
ture on electric properties would be minimal.
In this work, the electrostatic potential, electric
field strength, conduction electron concentration
n(x), and CVCs of the metal–undoped ZnxCd1−xTe
semiconductor–n-CdTe semiconductor substrate
(metal−i − n+) structure have been calculated with
regard for elastic deformations that arise both owing to
a mismatch between the lattice parameters of contact-
ing semiconductor materials and in the defect cluster
vicinity in a doped CdTe semiconductor substrate.
2. Model
Consider a three-layer structure: metal–undoped
ZnxCd1−xTe layer with thickness L–doped n+-CdTe
semiconductor substrate. The coordinate x is reckoned
434 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4
INFLUENCE OF DEFORMATION EFFECTS ON ELECTRICAL PROPERTIES
from the metal–semiconductor interface into the semi-
conductor depth.
1. Let the semiconductor substrate (x ≥ L) contain
point defects with the average concentration Nd0. De-
fects interact with both the electric field E = −dϕ(x)
dx
and the strain field U(x) = ∂ux
∂x , where ux is the com-
ponent of the medium displacement vector. Since the
substrate thickness is much larger than that of the un-
doped i-layer, the substrate deformation resulting owing
to the mismatch between the lattice parameters of con-
tacting semiconductor materials can be neglected. Only
the elastic strains that are created by point defects—
namely, ionized interstitial cadmium in CdTe material—
are taken into consideration.
To find the parameter of crystal lattice deformation
and the defect concentration, it is necessary to solve the
equations [8]
c2l
∂2U (x)
∂x2
+ c2l l
2
0
∂4U (x)
∂x4
− c2l |α|
∂2(U2 (x))
∂x2
+
+c2l β
∂2(U3 (x))
∂x2
− θd
ρ
∂2Nd (x)
∂x2
= 0, (1)
D
∂2Nd
∂x2
− Dθd
kT
∂
∂x
(
Nd(x)
(
∂U (x)
∂x
+ l2d
∂3U (x)
∂x3
))
+
+
∂
∂x
(
Nd(x)µ
∂ϕ(x)
∂x
)
= 0, (2)
where ρ is the medium density; cl is the longitudinal
sound velocity; θd = KAΔΩ is the deformation poten-
tial; ΔΩ is a change of the crystal volume per one de-
fect; KA is the uniform elastic constant; ld and l0 are
the characteristic lengths of the defect–crystal atom and
atom–atom interactions, respectively; α and β are the
constants of elastic anharmonicity; T is the tempera-
ture; D is the coefficient of defect diffusion; and k is the
Boltzmann constant.
Integrating Eq. (2), we obtain
Nd(x) = Nd0 exp
(
θd
kT
(
Ul (x)+l2d
∂2Ul (x)
∂x2
)
− µ
D
ϕ(x)
)
≈
≈ Nd0
(
1 +
θd
kT
(
Ul (x) + l2d
∂2Ul (x)
∂x2
)
− µ
D
ϕ(x)
)
. (3)
Substituting Eq. (3) into Eq. (1), we obtain a nonlin-
ear inhomogeneous differential equation for the medium
deformation
∂2Ul(x)
∂x2
− aUl(x) + fU2
l (x)− cU3
l (x) =
=
Nd0
Ndc
l2d
Nd0
Ndc
− l20
eϕ(x)
θd
, (4)
where Ul(x) is the spatially non-uniform component of
the deformation,
a =
1− Nd0
Ndc
l2d
Nd0
Ndc
− l20
; f =
|α|
l2d
Nd0
Ndc
− l20
;
c =
β
l2d
Nd0
Ndc
− l20
; Ndc =
ρc2l kT
θ2d
.
For a heavily doped n+-substrate, one can take ad-
vantage of the Thomas–Fermi approximation [4]. Then,
making allowance for deformation effects, the electro-
chemical potential looks like
χs(x) =
~2
2ms
(
3π2n(x)
)2/3 − eϕs(x) + acU(x), (5)
wherems is the effective mass of an electron in the doped
semiconductor material, n(x) is the electron concentra-
tion distribution, and ac is the constant of the hydro-
static deformation potential of the conduction band.
Let us consider the n+-layer as a three-component
system which contains electrons with the concentration
n(x), ionized motionless donors with the concentration
N+, and mobile donors with the concentration Nd(x).
The condition
n0 = N+ +Nd0, (6)
where n0 is a spatially uniform value of conduction elec-
tron concentration, is evidently fulfilled.
From formula (5), one can determine the charge carrier
concentration:
n(x) =
(
2ms
~2
)3/2
· (χs(x) + eϕs(x)− acU(x))3/2
3π2
. (7)
The current density is
j =
σ
e
dχs
dx
, (8)
where σ is the specific conductance of the n+-layer. Let
us assume that the conductivity of the doped substrate
to be high enough, so that the condition j
σ eLs � χ0,
where Ls is the substrate thickness, and χ0 = χ (∞) =
~2
2ms
(
3π2n0
)2/3 + acU0, is satisfied. Then the electron
concentration can be presented, in the linear approxi-
mation, as follows:
n(x) = n0 +R (eϕs(x)− acUl(x)) , (9)
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4 435
R.M. PELESHCHAK, O.V. KUZYK, O.O. DAN’KIV
where R =
(
2ms
~2
)3/2 √χ0
2π2 .
The electrostatic potential ϕs(x) is determined from
the Poisson equation
∇2ϕs (x) = − e
εsε0
(
Nd(x) +N+ − n (x)
)
, (10)
where εs is the dielectric permittivity of a semiconductor
substrate material.
Therefore, having solved the system of equations (4)
and (10), where expressions (3) and (9) are taken into
account, one can obtain the spatial distributions of elec-
trostatic potential, ϕs(x), crystal lattice deformation,
Ul(x), conduction electron concentration, n(x), and de-
fects, Nd(x), in the doped semiconductor substrate. Let
us solve this system using the iteration method. In the
first approximation, we obtain the solution of Eq. (4)
taking no interaction between defects and the electro-
static field into account (ϕs(x) = 0). Depending on the
magnitude of average point defect concentration, the so-
lution of Eq. (4) looks like
Ul (x) = 0, Nd0 < Ndc1, (11)
Ul (x) =
Asignθd
B + sh (−
√
a (x− x0))
, Ndc1 < Nd0 < Ndc2,
(12)
Ul (x) =
Asignθd
B + ch (
√
a (x− x0))
, Ndc2 < Nd0 < Ndc,
(13)
Ul (x) =
Asignθd
B + sin
(√
|a| (x− x0)
) , Nd0 > Ndc, (14)
where x0 means the position of a cluster in the doped
semiconductor substrate, A = 3
√
2 |a|
∣∣9ca− 2f2
∣∣−1/2,
B =
√
2f
∣∣9ca− 2f2
∣∣−1/2, Ndc1 = Ndc
(
l0
ld
)2
, Ndc2 =
Ndc
(
1− 2α2
9β
)
, and 2α2
9β = 4
9 [6].
Below, we confine the consideration to the case of sym-
metric defect cluster, which corresponds to formula (13).
Substituting Eqs. (3) and (9) into the Poisson equation
(10) and taking Eq. (6) into account, we obtain the fol-
lowing spatial distribution of the electrostatic potential
in the doped semiconductor substrate:
ϕs (x) = C1e
−gx − 1
2g
egx
∫
f(x)e−gxdx+
+
1
2g
e−gx
∫
f(x) · egxdx, (15)
where
f(x) = WUl (x) +
(
W − g2
0ac
e
)
l2d
∂2Ul (x)
∂x2
,
g0 =
√
e2R
εsε0
, g =
√
e2
(
R+
Nd0
kT
)
εsε0
, and C1 is the integration
constant.
2. Let us write down the expressions for the electro-
chemical potential and the electric current density, as
well as the Poisson equation, for the undoped i-layer,
when a deformation of the crystal lattice is taken into
consideration 4:
χ(x) = kT ln
n(x)
Ni
+ Δi − eϕ(x) + acU(x), (16)
j = nµn
dχ
dx
, (17)
∇2ϕ (x) =
e
εε0
n (x) , (18)
where Ni = 2
(
2πmkT
h2
)3/2
is the effective density of
states, Δi is the gap between the conduction bands at
the semiconductor interface, µn is the electron mobil-
ity, and ε is the relative dielectric permittivity of the
medium. From Eqs. (16)–(18) and bearing in mind that
E = −dϕ(x)
dx , we obtain a nonlinear equation for the elec-
tric field,
kT
e
d2E
dx2
+ E
dE
dx
+
ac
e
dE
dx
dU
dx
= − j
µnεε0
. (19)
Consider the case where the distance from the inter-
face between semiconductor materials to the center of
a cluster of defects that are contained in the substrate
is much larger than the cluster size (x0 � 1/
√
a). In
this case, a deformation in the i-layer, which arises in
a vicinity of defect-deformation structures, can be ne-
glected. However, a deformation of the undoped layer
induced by a mismatch between the lattice parameters
of contacting materials can be substantial. To study the
influence of this mismatch on the electron injection into
the undoped layer, we confine ourselves to the linear ap-
proximation for the deformation,
U(x) = U0
x
L
, (20)
436 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4
INFLUENCE OF DEFORMATION EFFECTS ON ELECTRICAL PROPERTIES
U0 = Uxx + Uyy + Uzz,
Uyy = Uzz =
as − a0
as
, Uxx = −2C12
C11
Uyy,
where Uxx, Uyy, and Uzz are the components of the
strain tensor; as and a0 are the lattice parameters of
the substrate and i-layer materials, respectively.
Changing over to dimensionless quantities and inte-
grating Eq. (19), we obtain
dẼ
dz
+
Ẽ2
2
+ j̃z = A, (21)
where A is an integration constant, Ẽ =
e
kTg0
(
E + acU0
eL
)
, j̃ = e2j
εε0µn(kT )2g30
, and z = g0x.
The solution of Eq. (21) can be expressed in terms of
Airy functions and looks like [4]
Ẽ(z) = −2
(
j̃
2
)1/3
Ai′(y) + C2 ·Bi′(y)
Ai(y) + C2 ·Bi(y)
, (22)
where y(z) =
(
j̃/2
)1/3 (
A/j̃ − z
)
.
In order to calculate the electric field, electrostatic po-
tential, and current density, let us take advantage of a
technique proposed in work [4]. The following condi-
tions, which enable the integration constants to be de-
termined as functions of the current density, must be
satisfied at the interface between semiconductor materi-
als:
ϕ(L− 0) = ϕs(L+ 0);
εdϕdx |x=L−0 = εs
dϕs
dx |x=L+0 ;
χ(L− 0) = χs(L+ 0).
(23)
Equating the electrochemical potential of the semicon-
ductor at its interface with the metal to χ(0), we obtain
an additional boundary condition
n(0) = Nie
− Δ
kT , (24)
where Δ = Δi − eϕ (0) − χ (0) is the potential barrier
height at the semiconductor–metal interface.
In view of Eq. (18), equality (24) can be rewritten in
the form
d2ϕ
dx2
∣∣∣∣
x=0
=
eNi
εε0
e−
Δ
kT . (25)
Then, taking into account that χ(0) = χ0−eV [4], where
V is the applied voltage, we obtain the expression
eV = eϕ(0) + χ0 + Δ−Δi. (26)
Fig. 1. Spatial distributions of the electrostatic potential (a) and
electrons (b) in the metal–i–n+ structure with a cluster (solid
curves) and without it (dashed curves) for Δ = 0.6 eV (1 ), 0.3 eV
(2 ), and 0 eV at Δi = 0 eV (3 )
By solving the system of equations (23) and (25), we
can determine ϕ(0) as a function of the current density.
Substituting it into Eq. (26), we obtain a transcendental
equation which allows the CVC of the structure under
investigation to be determined.
3. Calculation Results and Their Discussion
In Fig. 1, the results of calculations of the spatial dis-
tributions of electrostatic potential and conduction elec-
tron concentration in the metal–undoped CdTe–doped
n-CdTe substrate structure at the zero bias voltage
are presented for the following values of parameters:
T = 300 ◦C, D = 3 × 10−9 cm2/s [11], ac = 3.38 eV,
Dn = 102 cm2/s, µn = 103 cm2/(V×s) [12], θd = 10 eV,
ε = εs = 9.7, l0 = 0.5 nm, ld = 2.9 nm [6], ρc2l =
0.79 Mbar, KA = 450 eV/nm3 [13], x0 = 20 nm, L =
10 nm, Nd0 = 2 × 1018 cm−3, and n0 = 3 × 1018 cm−3.
The calculations were carried out for various Δ-values
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4 437
R.M. PELESHCHAK, O.V. KUZYK, O.O. DAN’KIV
Fig. 2. Spatial distributions of electrons in the metal–i–n+ struc-
ture at Δi = 0.3 eV and for Δ = 0.3 (1 ), 0.6 (2 ), and 0 eV (3 ).
The dashed curve corresponds to calculations taking no deforma-
tion effects into account
within the interval 0 eV ≤ Δ ≤ 0.6 eV. The height Δ
of the barrier at the interface with the metal can be re-
duced (even down to zero) by the δ-doping of the i-layer
immediately near the metal [2, 4].
Let us consider the case where a symmetric cluster
is formed by interstitial cadmium Cdi in a CdTe semi-
conductor substrate, and let its center be located at the
point x0 (formula (13)). The presence of the cluster in-
vokes a non-uniform internal electric field in the bulk
of doped CdTe and a corresponding redistribution of
charge carriers. Some localization of electrons is ob-
served in a vicinity of the defect-deformation structure
and, accordingly, a reduction of their concentration in
the i-layer. The influence of deformation effects on the
charge carrier injection becomes more substantial, if the
barrier Δ at the interface with the metal decreases. For
instance, at Δ = 0, owing to the presence of the in-
terstitial Cdi cluster in the substrate, the concentra-
tion of electrons in the i-layer becomes four times lower
(Fig. 1).
In the case where ZnxCd1−xTe is used as an intermedi-
ate layer between the metal and the substrate material,
an additional barrier Δi arises at the interface between
semiconductors due to the gap that occurs between the
conduction bands in contacting materials. In this case
(Fig. 2), the influence of deformation effects leads to an
insignificant (up to 20%) increase of the electron concen-
tration in the i-layer near the interface between the semi-
conductors. This phenomenon is associated with the fact
that the barrier at the semiconductor interface consid-
Fig. 3. Current-voltage characteristics of the metal–i–n+ structure
at various values of the average defect concentration (Δi = 0):
Nd0 = 0 (1, 1 ′), 2 × 1018 (2, 2 ′), and 6 × 1018 cm−3 (3, 3 ′).
Δ = 0 (1, 2, 3 ) and 0.3 eV (1 ′, 2 ′, 3 ′)
erably reduces the influence of defect-deformation struc-
tures existing in the doped substrate on the charge car-
rier injection. The mismatch between the lattice param-
eters of contacting semiconductors results in the emer-
gence of a non-uniform tensile deformation in the i-layer
and, accordingly, an additional electron flux from the
metal contact to the i-layer–doped semiconductor inter-
face.
In Fig. 3, the CVCs of metal–i-layer–doped semicon-
ductor substrate structures are exhibited for various Δ
and average defect concentrations Nd0. The presence of
clusters in the substrate brings about a substantial re-
duction of the electric current at insignificant bias volt-
ages. An increase of the applied voltage leads to a de-
crease of the cluster size [8]. Therefore, the current den-
sities at high voltages (V > 1 V) practically do not differ
from the corresponding values in the defect-free struc-
ture. If the defect concentration increases (Fig. 3), the
current density diminishes. This can be explained by
the fact that a tensile deformation grows in a vicinity
of the cluster, whereas an increase of the electron con-
centration in the doped substrate practically does not
influence the injection of carriers into the i-layer.
4. Conclusions
The influence of a deformation that arises in a vicinity
of the defect cluster of interstitial cadmium in a doped
CdTe semiconductor substrate on the injection of elec-
trons into the insulating layer of the metal–i–n+ struc-
438 ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4
INFLUENCE OF DEFORMATION EFFECTS ON ELECTRICAL PROPERTIES
ture has been studied. In the absence of a barrier at
the metal–semiconductor interface, the presence of the
cluster is demonstrated to result in a reduction of the
charge carrier concentration in the i-layer by a factor of
four.
The mismatch between the lattice parameters of the
contacting semiconductor substances in the metal–i–n+
structure is found to be the origin of the electron con-
centration growth in the i-layer.
The increase of barriers at both the metal–
semiconductor and semiconductor–semiconductor inter-
faces is shown to reduce the influence of the cluster on
the charge carrier injection into the i-layer of the metal–
i–n+ structure.
1. S.M. Sze, Physics of Semiconductor Devices (Wiley, New
York, 1981).
2. V.I. Shashkin and A.V. Murel, Fiz. Tverd. Tela 50, 519
(2008).
3. F.Yu. Soldatenkov, V.G. Danil’chenko, anf V.I. Ko-
rol’kov, Fiz. Tekh. Poluprovodn. 41, 217 (2007).
4. V.I. Shashkin and N.V. Vostokov, Fiz. Tekh.
Poluprovodn. 42, 1339 (2008).
5. S.V. Vintsents, A.V. Zaytseva, and G.S. Plotnikov, Fiz.
Tekh. Poluprovodn. 37, 134 (2002).
6. V.I. Emel’yanov and I.M. Panin, Fiz. Tverd. Tela 39,
2029 (1997).
7. V.I. Emel’yanov, Fiz. Tverd. Tela 43, 637 (2001).
8. R.M. Peleshchak and O.V. Kuzyk, Ukr. Fiz. Zh. 54, 703
(2009).
9. V.E. Lashkarev, A.V. Lyubchenko, and M.K. Sheinkman,
Nonequilibrium Processes in Photoconductors (Kyiv,
Naukova Dumka, 1981) (in Russian).
10. N.E. Korsunskaya, I.V. Markevich, T.V. Torchinskaya,
and M.K. Sheinkman, Phys. Status Solidi A 60, 565
(1980).
11. N.I. Kashyrina, V.V. Kyslyuk, and M.K. Sheinkman,
Ukr. Fiz. Zh. 44, 856 (1999).
12. D.V. Korbutyak, S.W. Mel’nychuk, E.V. Korbut, and
M.M. Borysyk, Cadmium Telluride: Impurity-Defect
States and Detector Properties (Ivan Fedorov, Kyiv,
2000) (in Ukrainian).
13. C.G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
Received 13.10.09.
Translated from Ukrainian by O.I. Voitenko
ВПЛИВ ДЕФОРМАЦIЙНИХ ЕФЕКТIВ
НА ЕЛЕКТРИЧНI ВЛАСТИВОСТI СТРУКТУРИ
МЕТАЛ–НАПIВПРОВIДНИК–ЛЕГОВАНИЙ
НАПIВПРОВIДНИК
Р.М. Пелещак, О.В. Кузик, О.О. Данькiв
Р е з ю м е
Дослiджено вплив пружних деформацiй, що виникають як
за рахунок невiдповiдностi параметрiв ґраток контактуючих
напiвпровiдникових матерiалiв, так i в околi кластера дефе-
ктiв мiжвузловинного кадмiю у легованiй напiвпровiдниковiй
пiдкладцi CdTe, на iнжекцiю електронiв в iзолюючий шар
структури метал–нелегований напiвпровiдник ZnxCd1−xTe–
напiвпровiдникова пiдкладка n-CdTe.
ISSN 2071-0194. Ukr. J. Phys. 2010. Vol. 55, No. 4 439
|
| id | nasplib_isofts_kiev_ua-123456789-13435 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 2071-0194 |
| language | Ukrainian |
| last_indexed | 2025-12-07T15:59:28Z |
| publishDate | 2010 |
| publisher | Відділення фізики і астрономії НАН України |
| record_format | dspace |
| spelling | Пелещак, Р.М. Кузик, О.В. Даньків, О.О. 2010-11-08T17:27:07Z 2010-11-08T17:27:07Z 2010 Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник / Р.М. Пелещак, О.В. Кузик, О.О. Даньків // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 437-442. — Бібліогр.: 13 назв. — укр. 2071-0194 PACS 61.72.JJ https://nasplib.isofts.kiev.ua/handle/123456789/13435 533.3+537.2 Дослiджено вплив пружних деформацiй, що виникають як за рахунок невiдповiдностi параметрiв ґраток контактуючих напiвпровiдникових матерiалiв, так i в околi кластера дефектiв мiжвузловинного кадмiю у легованiй напiвпровiдниковiй пiдкладцi CdTe, на iнжекцiю електронiв в iзолюючий шар структури метал–нелегований напiвпровiдник ZnxCd1-xTe–напiвпровiдникова пiдкладка n-CdTe. Исследовано влияние упругих деформаций, вызванных как несоответствием параметров решеток контактирующих полупроводниковых материалов, так и наличием кластера дефектов междоузельного кадмия в легированной полупроводниковой подложке CdTe, на инжекцию электронов в изолирующий слой структуры металл–нелегированный полупроводник ZnxCd1-xTe–полупроводниковая подложка n-CdTe. The influence of elastic deformations that arise owing to a mismatch between the lattice parameters of contacting semiconductor materials and in a vicinity of the defect cluster induced by interstitial cadmium in a doped semiconductor CdTe substrate on the electron injection into the insulating layer of the metal–undoped ZnxCd1-xTe semiconductor–n-CdTe semiconductor substrate structure has been studied. uk Відділення фізики і астрономії НАН України Тверде тіло Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник Влияние деформационных эффектов на электрические свойства структуры металл–полупроводник–легированный полупроводник Influence of Deformation Effects on Electrical Properties of Structure Metal−Semiconductor−Doped Semiconductor Article published earlier |
| spellingShingle | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник Пелещак, Р.М. Кузик, О.В. Даньків, О.О. Тверде тіло |
| title | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| title_alt | Влияние деформационных эффектов на электрические свойства структуры металл–полупроводник–легированный полупроводник Influence of Deformation Effects on Electrical Properties of Structure Metal−Semiconductor−Doped Semiconductor |
| title_full | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| title_fullStr | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| title_full_unstemmed | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| title_short | Вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| title_sort | вплив деформаційних ефектів на електричні властивості структури метал−напівпровідник−легований напівпровідник |
| topic | Тверде тіло |
| topic_facet | Тверде тіло |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/13435 |
| work_keys_str_mv | AT peleŝakrm vplivdeformacíinihefektívnaelektričnívlastivostístrukturimetalnapívprovídniklegovaniinapívprovídnik AT kuzikov vplivdeformacíinihefektívnaelektričnívlastivostístrukturimetalnapívprovídniklegovaniinapívprovídnik AT danʹkívoo vplivdeformacíinihefektívnaelektričnívlastivostístrukturimetalnapívprovídniklegovaniinapívprovídnik AT peleŝakrm vliâniedeformacionnyhéffektovnaélektričeskiesvoistvastrukturymetallpoluprovodniklegirovannyipoluprovodnik AT kuzikov vliâniedeformacionnyhéffektovnaélektričeskiesvoistvastrukturymetallpoluprovodniklegirovannyipoluprovodnik AT danʹkívoo vliâniedeformacionnyhéffektovnaélektričeskiesvoistvastrukturymetallpoluprovodniklegirovannyipoluprovodnik AT peleŝakrm influenceofdeformationeffectsonelectricalpropertiesofstructuremetalsemiconductordopedsemiconductor AT kuzikov influenceofdeformationeffectsonelectricalpropertiesofstructuremetalsemiconductordopedsemiconductor AT danʹkívoo influenceofdeformationeffectsonelectricalpropertiesofstructuremetalsemiconductordopedsemiconductor |