Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices
A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tun...
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| Опубліковано в: : | Физика низких температур |
|---|---|
| Дата: | 1999 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/134704 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-134704 |
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Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. 2018-06-14T07:17:23Z 2018-06-14T07:17:23Z 1999 Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. 0132-6414 https://nasplib.isofts.kiev.ua/handle/123456789/134704 A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tunneling through a semiconductor layer depends sharply on the electron incidence angle. The oscillations have been found to exist even in disordered systems, provided the electrons in metal layers undergo low-angle scattering on imperfections. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электpонные свойства металлов и сплавов Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| spellingShingle |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. Электpонные свойства металлов и сплавов |
| title_short |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_full |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_fullStr |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_full_unstemmed |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_sort |
quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| author |
Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. |
| author_facet |
Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. |
| topic |
Электpонные свойства металлов и сплавов |
| topic_facet |
Электpонные свойства металлов и сплавов |
| publishDate |
1999 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tunneling through a semiconductor layer depends sharply on the electron incidence angle. The oscillations have been found to exist even in disordered systems, provided the electrons in metal layers undergo low-angle scattering on imperfections.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/134704 |
| citation_txt |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. |
| work_keys_str_mv |
AT fogelnya quantumsizeeffectandinterlayerelectrontunnelinginmetalsemiconductorsuperlattices AT shekhterri quantumsizeeffectandinterlayerelectrontunnelinginmetalsemiconductorsuperlattices AT slutskinaa quantumsizeeffectandinterlayerelectrontunnelinginmetalsemiconductorsuperlattices AT kovtunha quantumsizeeffectandinterlayerelectrontunnelinginmetalsemiconductorsuperlattices |
| first_indexed |
2025-12-07T15:43:21Z |
| last_indexed |
2025-12-07T15:43:21Z |
| _version_ |
1850864777554821120 |