The formation of n-n⁺ transition in the implanted crystal matrix
The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0....
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| Published in: | Functional Materials |
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| Date: | 2004 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2004
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/134811 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726100949401600 |
|---|---|
| author | Peleshchak, R.M. Kuzyk, O.V. Tupichak, V.P. Shuptar, D.D. |
| author_facet | Peleshchak, R.M. Kuzyk, O.V. Tupichak, V.P. Shuptar, D.D. |
| citation_txt | The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus the plane, which corresponds to the border of transition, is shifted to the border of elasticity with the increase of n.
В рамках электрон-деформационной модели раскрыто существование n-n⁺ перехода в упругой области имплантированной кристаллической матрицы GaAs(100) + Ar(Si). Показано, что с ростом степени заполнения зоны проводимости (0 <= n <= 0.5) переход становится более резким. При этом плоскость, соответствующая границе перехода, с ростом n сдвигается к границе упругости.
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| first_indexed | 2025-12-07T18:55:49Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-134811 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T18:55:49Z |
| publishDate | 2004 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Peleshchak, R.M. Kuzyk, O.V. Tupichak, V.P. Shuptar, D.D. 2018-06-14T09:10:29Z 2018-06-14T09:10:29Z 2004 The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/134811 The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus the plane, which corresponds to the border of transition, is shifted to the border of elasticity with the increase of n. В рамках электрон-деформационной модели раскрыто существование n-n⁺ перехода в упругой области имплантированной кристаллической матрицы GaAs(100) + Ar(Si). Показано, что с ростом степени заполнения зоны проводимости (0 <= n <= 0.5) переход становится более резким. При этом плоскость, соответствующая границе перехода, с ростом n сдвигается к границе упругости. en НТК «Інститут монокристалів» НАН України Functional Materials The formation of n-n⁺ transition in the implanted crystal matrix Article published earlier |
| spellingShingle | The formation of n-n⁺ transition in the implanted crystal matrix Peleshchak, R.M. Kuzyk, O.V. Tupichak, V.P. Shuptar, D.D. |
| title | The formation of n-n⁺ transition in the implanted crystal matrix |
| title_full | The formation of n-n⁺ transition in the implanted crystal matrix |
| title_fullStr | The formation of n-n⁺ transition in the implanted crystal matrix |
| title_full_unstemmed | The formation of n-n⁺ transition in the implanted crystal matrix |
| title_short | The formation of n-n⁺ transition in the implanted crystal matrix |
| title_sort | formation of n-n⁺ transition in the implanted crystal matrix |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/134811 |
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