The formation of n-n⁺ transition in the implanted crystal matrix

• Veröffentlicht in: Functional Materials
• Datum: 2004
• Hauptverfasser: Peleshchak, R.M., Kuzyk, O.V., Tupichak, V.P., Shuptar, D.D.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/134811
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The formation of n-n⁺ transition in the implanted crystal matrix / R.M. Peleshchak, O.V. Kuzyk, V.P. Tupichak, D.D. Shuptar // Functional Materials. — 2005. — Т. 12, № 2. — С. 201-205. — Бібліогр.: 6 назв. — англ.

The existence of n-n⁺ transition in the elastic area of the implanted crystal matrix GaAs(100) + Ar(Si) is discussed within the framework of the electron-deformation model. It is shown that n-n+ transition becomes sharper with the increase of conductivity zone population (0 <= n <= 0.5). Thus...