Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide

Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emissi...

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Published in:Functional Materials
Date:2006
Main Authors: Litvinova, M.B., Shutov, S.V., Shtan`ko, A.D., Kurak, V.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/135018
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide / M.B. Litvinova, S.V. Shutov, A.D. Shtan`ko, V.V. Kurak // Functional Materials. — 2006. — Т. 13, № 3. — С. 538-541. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-135018
record_format dspace
spelling Litvinova, M.B.
Shutov, S.V.
Shtan`ko, A.D.
Kurak, V.V.
2018-06-14T13:27:13Z
2018-06-14T13:27:13Z
2006
Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide / M.B. Litvinova, S.V. Shutov, A.D. Shtan`ko, V.V. Kurak // Functional Materials. — 2006. — Т. 13, № 3. — С. 538-541. — Бібліогр.: 12 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135018
Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is due most likely to formation of EL2-dopant complexes.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
Випромінювальна рекомбінація через центри EL2 у монокристалах арсеніду галію, легованих селеном і кадмієм
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
spellingShingle Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
Litvinova, M.B.
Shutov, S.V.
Shtan`ko, A.D.
Kurak, V.V.
title_short Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
title_full Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
title_fullStr Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
title_full_unstemmed Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide
title_sort radiative recombination through el2 centers in selenium and cadmium single crystals doped gallium arsenide
author Litvinova, M.B.
Shutov, S.V.
Shtan`ko, A.D.
Kurak, V.V.
author_facet Litvinova, M.B.
Shutov, S.V.
Shtan`ko, A.D.
Kurak, V.V.
publishDate 2006
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Випромінювальна рекомбінація через центри EL2 у монокристалах арсеніду галію, легованих селеном і кадмієм
description Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is due most likely to formation of EL2-dopant complexes.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/135018
citation_txt Radiative recombination through EL2 centers in selenium and cadmium single crystals doped gallium arsenide / M.B. Litvinova, S.V. Shutov, A.D. Shtan`ko, V.V. Kurak // Functional Materials. — 2006. — Т. 13, № 3. — С. 538-541. — Бібліогр.: 12 назв. — англ.
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first_indexed 2025-12-07T19:29:26Z
last_indexed 2025-12-07T19:29:26Z
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