Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films
Electric resistivity and microstructure of silicon-doped (5 to 38 at. % Si) amorphous carbon (α-C) films deposited by de magnetron sputtering in argon plasma of composed (graphite + single crystalline silicon) target has been studied as a function of silicon content in films. The film resistivity pa...
Gespeichert in:
| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2006
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135059 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films / A.A. Onoprienko, I.B. Yanchuk // Functional Materials. — 2006. — Т. 13, № 4. — С. 652-656. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-135059 |
|---|---|
| record_format |
dspace |
| spelling |
Onoprienko, A.A. Yanchuk, I.B. 2018-06-14T14:46:31Z 2018-06-14T14:46:31Z 2006 Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films / A.A. Onoprienko, I.B. Yanchuk // Functional Materials. — 2006. — Т. 13, № 4. — С. 652-656. — Бібліогр.: 17 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135059 Electric resistivity and microstructure of silicon-doped (5 to 38 at. % Si) amorphous carbon (α-C) films deposited by de magnetron sputtering in argon plasma of composed (graphite + single crystalline silicon) target has been studied as a function of silicon content in films. The film resistivity parallel and perpendicular to substrate surface was measured. The film structure was studied by electron diffraction and Raman spectroscopy. Doping with silicon did not influence the resistivity p⊥ over the whole range of silicon concentrations studied, but resulted in marked increase in resistivity p║. Incorporation of silicon atoms into graphite-like cluster structure of carbon films results in distortion and disordering thereof in planes parallel to the substrate surface, thus promoting an increase in p║. en НТК «Інститут монокристалів» НАН України Functional Materials Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films Дослідження електроопору та мікроструктури α-C:Si плівок, одержаних магнетронним розпиленням Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films |
| spellingShingle |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films Onoprienko, A.A. Yanchuk, I.B. |
| title_short |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films |
| title_full |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films |
| title_fullStr |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films |
| title_full_unstemmed |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films |
| title_sort |
stydy on resistivity and micostructure of magnetron sputtered α-c:si films |
| author |
Onoprienko, A.A. Yanchuk, I.B. |
| author_facet |
Onoprienko, A.A. Yanchuk, I.B. |
| publishDate |
2006 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Дослідження електроопору та мікроструктури α-C:Si плівок, одержаних магнетронним розпиленням |
| description |
Electric resistivity and microstructure of silicon-doped (5 to 38 at. % Si) amorphous carbon (α-C) films deposited by de magnetron sputtering in argon plasma of composed (graphite + single crystalline silicon) target has been studied as a function of silicon content in films. The film resistivity parallel and perpendicular to substrate surface was measured. The film structure was studied by electron diffraction and Raman spectroscopy. Doping with silicon did not influence the resistivity p⊥ over the whole range of silicon concentrations studied, but resulted in marked increase in resistivity p║. Incorporation of silicon atoms into graphite-like cluster structure of carbon films results in distortion and disordering thereof in planes parallel to the substrate surface, thus promoting an increase in p║.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/135059 |
| citation_txt |
Stydy on resistivity and micostructure of magnetron sputtered α-C:Si films / A.A. Onoprienko, I.B. Yanchuk // Functional Materials. — 2006. — Т. 13, № 4. — С. 652-656. — Бібліогр.: 17 назв. — англ. |
| work_keys_str_mv |
AT onoprienkoaa stydyonresistivityandmicostructureofmagnetronsputteredαcsifilms AT yanchukib stydyonresistivityandmicostructureofmagnetronsputteredαcsifilms AT onoprienkoaa doslídžennâelektrooporutamíkrostrukturiαcsiplívokoderžanihmagnetronnimrozpilennâm AT yanchukib doslídžennâelektrooporutamíkrostrukturiαcsiplívokoderžanihmagnetronnimrozpilennâm |
| first_indexed |
2025-12-07T18:18:30Z |
| last_indexed |
2025-12-07T18:18:30Z |
| _version_ |
1850874538783408128 |