The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependenc...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/135078 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862710098769477632 |
|---|---|
| author | Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. |
| author_facet | Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. |
| citation_txt | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration.
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| first_indexed | 2025-12-07T17:22:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-135078 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T17:22:33Z |
| publishDate | 2006 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. 2018-06-14T14:55:55Z 2018-06-14T14:55:55Z 2006 The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135078 Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration. en НТК «Інститут монокристалів» НАН України Functional Materials The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Вплив високоенергетичного опромінювання на електрчні і дисипативні властивості монокристалів кремнію Article published earlier |
| spellingShingle | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals Pelikhaty, N.M. Rokhmanov, N.Ya. Onischnko, V.V. |
| title | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_alt | Вплив високоенергетичного опромінювання на електрчні і дисипативні властивості монокристалів кремнію |
| title_full | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_fullStr | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_full_unstemmed | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_short | The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| title_sort | influence of high energy irradiation on electrical and dissipative properties of silicon single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135078 |
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