The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals

• Veröffentlicht in: Functional Materials
• Datum: 2006
• Hauptverfasser: Pelikhaty, N.M., Rokhmanov, N.Ya., Onischnko, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135078
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ.

Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependenc...