Radiological characterization of metal oxide semiconductor field effect transistor dosimeter

• Veröffentlicht in: Functional Materials
• Datum: 2004
• Hauptverfasser: Chan-Hyeong Kim, Sang-Hoon Lee, Baodong Wang, X.George Xu
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135238
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Radiological characterization of metal oxide semiconductor field effect transistor dosimeter / Chan-Hyeong Kim, Sang-Hoon Lee, Baodong Wang, X.George Xu // Functional Materials. — 2004. — Т. 11, № 1. — С. 183-185. — Бібліогр.: 4 назв. — англ.

This paper reports our effort to develop a detailed 3D Monte Carlo simulation model of the High-Sensitivity MOSFET dosimeter using the MCNP 4C code for radiological charac -terization. To determine the dosimeter response accurately, this study has taken three actions: (1) The absorbed dose to the se...