Radiation induced defects in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions
Radiation-induced processes in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions have been studied. It is shown that the radiation coloration of M₀.₆₅Pr₀.₃₅F₂₃₅ crystals is due to the trapping of charge carriers at anion sublattice defects. The efficiency of color centers formation in the inv...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | Boiaryntseva, I.A., Shiran, N.V., Gektin, A.V. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2012
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135326 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation induced defects in M₁₋ₓPrₓF₂₊ₓ (M²⁺ = Ca, Sr, Ba, x = 0.35) solid solutions / I.A. Boiaryntseva, N.V. Shiran, A.V. Gektin // Functional Materials. — 2012. — Т. 19, № 3. — С. 313-318. — Бібліогр.: 28 назв. — англ. |
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