HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new h...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2012 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/135327 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862600413283352576 |
|---|---|
| author | Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. |
| author_facet | Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. |
| citation_txt | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current.
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| first_indexed | 2025-11-28T01:19:19Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-135327 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-28T01:19:19Z |
| publishDate | 2012 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. 2018-06-14T19:01:01Z 2018-06-14T19:01:01Z 2012 HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135327 By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe HgCrCdSe як елемент нової гетероструктури HgCrCdSe/HgMnTe Article published earlier |
| spellingShingle | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. Characterization and properties |
| title | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_alt | HgCrCdSe як елемент нової гетероструктури HgCrCdSe/HgMnTe |
| title_full | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_fullStr | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_full_unstemmed | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_short | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_sort | hgcrcdse as an element of new heterostructure hgcrcdse/hgmnte |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135327 |
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