HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe

By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new h...

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Veröffentlicht in:Functional Materials
Datum:2012
Hauptverfasser: Bekirov, B., Ivanchenko, I., Popenko, N., Tkach, V.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2012
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/135327
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-135327
record_format dspace
spelling Bekirov, B.
Ivanchenko, I.
Popenko, N.
Tkach, V.
2018-06-14T19:01:01Z
2018-06-14T19:01:01Z
2012
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135327
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
HgCrCdSe як елемент нової гетероструктури HgCrCdSe/HgMnTe
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
spellingShingle HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
Bekirov, B.
Ivanchenko, I.
Popenko, N.
Tkach, V.
Characterization and properties
title_short HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
title_full HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
title_fullStr HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
title_full_unstemmed HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
title_sort hgcrcdse as an element of new heterostructure hgcrcdse/hgmnte
author Bekirov, B.
Ivanchenko, I.
Popenko, N.
Tkach, V.
author_facet Bekirov, B.
Ivanchenko, I.
Popenko, N.
Tkach, V.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2012
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt HgCrCdSe як елемент нової гетероструктури HgCrCdSe/HgMnTe
description By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/135327
citation_txt HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ.
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first_indexed 2025-11-28T01:19:19Z
last_indexed 2025-11-28T01:19:19Z
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