Effect of ZnGeP₂ annealing in Zn vapor on the laser spectrum

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Patskun, I.I., Rybalko, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135337
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of ZnGeP₂ annealing in Zn vapor on the laser spectrum / I.I. Patskun, A.V. Rybalko // Functional Materials. — 2005. — Т. 12, № 2. — С. 235-239. — Бібліогр.: 9 назв. — англ.

The work is devoted to experimental investigation of the band structure, deep local centers and complexes as well as of generation/recombination processes in the ZnGeP₂ semiconductor crystal. The crystals grown by Bridgeman technique, annealed in Zn vapor
 and unannealed were studied. The dy...