Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy
The composition control possibility of the GaAs₁₋ₓPₓ solid solution on GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. It has been established that under steady-state conditions specifying the process parameters such as temperature and/or the...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2008
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135360 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy // V. Tsybulenko, Ye. Baganov, V. Krasnov, S. Shutov // Functional Materials. — 2008. — Т. 15, № 3. — С. 413-419. — Бібліогр.: 14 назв. — англ. |