Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy

• Veröffentlicht in: Functional Materials
• Datum: 2008
• ISSN: 1027-5495
• Hauptverfasser: Tsybulenko, V., Baganov, Ye., Krasnov, V., Shutov, S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
• Schlagworte: Modeling and simulation
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/135360
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy // V. Tsybulenko, Ye. Baganov, V. Krasnov, S. Shutov // Functional Materials. — 2008. — Т. 15, № 3. — С. 413-419. — Бібліогр.: 14 назв. — англ.

The composition control possibility of the GaAs₁₋ₓPₓ solid solution on GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. It has been established that under steady-state conditions specifying the process parameters such as temperature and/or the...