Geometrization of the temporal photoresponse from the semiconductor sensor materials

Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power b...

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Bibliographic Details
Published in:Functional Materials
Date:2012
Main Authors: Mygal, V.P., But, A.V., Shmatko, O.O., Bodnar, I.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2012
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/135367
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power balances of photoresponse components from sensor crystals which display the basic phases of generation-recombination processes.
ISSN:1027-5495