Geometrization of the temporal photoresponse from the semiconductor sensor materials
Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power b...
Збережено в:
| Опубліковано в: | Functional Materials |
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| Дата: | 2012 |
| ISSN: | 1027-5495 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/135367 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power balances of photoresponse components from sensor crystals which display the basic phases of generation-recombination processes.
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| ISSN: | 1027-5495 |