Geometrization of the temporal photoresponse from the semiconductor sensor materials
Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power b...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2012 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2012
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135367 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power balances of photoresponse components from sensor crystals which display the basic phases of generation-recombination processes.
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| ISSN: | 1027-5495 |