Geometrization of the temporal photoresponse from the semiconductor sensor materials

Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power b...

Full description

Saved in:
Bibliographic Details
Published in:Functional Materials
Date:2012
Main Authors: Mygal, V.P., But, A.V., Shmatko, O.O., Bodnar, I.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2012
Subjects:
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/135367
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-135367
record_format dspace
spelling Mygal, V.P.
But, A.V.
Shmatko, O.O.
Bodnar, I.V.
2018-06-15T06:02:18Z
2018-06-15T06:02:18Z
2012
Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135367
Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power balances of photoresponse components from sensor crystals which display the basic phases of generation-recombination processes.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Devices and instruments
Geometrization of the temporal photoresponse from the semiconductor sensor materials
Геометризація часового фотовідгуку напівпровідникових сенсорних матеріалів
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Geometrization of the temporal photoresponse from the semiconductor sensor materials
spellingShingle Geometrization of the temporal photoresponse from the semiconductor sensor materials
Mygal, V.P.
But, A.V.
Shmatko, O.O.
Bodnar, I.V.
Devices and instruments
title_short Geometrization of the temporal photoresponse from the semiconductor sensor materials
title_full Geometrization of the temporal photoresponse from the semiconductor sensor materials
title_fullStr Geometrization of the temporal photoresponse from the semiconductor sensor materials
title_full_unstemmed Geometrization of the temporal photoresponse from the semiconductor sensor materials
title_sort geometrization of the temporal photoresponse from the semiconductor sensor materials
author Mygal, V.P.
But, A.V.
Shmatko, O.O.
Bodnar, I.V.
author_facet Mygal, V.P.
But, A.V.
Shmatko, O.O.
Bodnar, I.V.
topic Devices and instruments
topic_facet Devices and instruments
publishDate 2012
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Геометризація часового фотовідгуку напівпровідникових сенсорних матеріалів
description Geometrization of the temporal photoresponse of A²B⁶ semiconductor compounds by means of it transformation to the first- and second-order signatures provides qualitative new possibilities for the control of the compounds quality. It has been offered the integrative indexes of the dynamic and power balances of photoresponse components from sensor crystals which display the basic phases of generation-recombination processes.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/135367
citation_txt Geometrization of the temporal photoresponse from the semiconductor sensor materials / V.P. Mygal, A.V. But, O.O. Shmatko, I.V. Bodnar // Functional Materials. — 2012. — Т. 19, № 4. — С. 564-568. — Бібліогр.: 16 назв. — англ.
work_keys_str_mv AT mygalvp geometrizationofthetemporalphotoresponsefromthesemiconductorsensormaterials
AT butav geometrizationofthetemporalphotoresponsefromthesemiconductorsensormaterials
AT shmatkooo geometrizationofthetemporalphotoresponsefromthesemiconductorsensormaterials
AT bodnariv geometrizationofthetemporalphotoresponsefromthesemiconductorsensormaterials
AT mygalvp geometrizacíâčasovogofotovídgukunapívprovídnikovihsensornihmateríalív
AT butav geometrizacíâčasovogofotovídgukunapívprovídnikovihsensornihmateríalív
AT shmatkooo geometrizacíâčasovogofotovídgukunapívprovídnikovihsensornihmateríalív
AT bodnariv geometrizacíâčasovogofotovídgukunapívprovídnikovihsensornihmateríalív
first_indexed 2025-12-07T17:08:35Z
last_indexed 2025-12-07T17:08:35Z
_version_ 1850870139793178624