Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relax...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2012 |
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| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2012
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135379 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862619323019821056 |
|---|---|
| author | Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. |
| author_facet | Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. |
| citation_txt | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure.
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| first_indexed | 2025-12-07T13:18:24Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-135379 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T13:18:24Z |
| publishDate | 2012 |
| publisher | НТК «Інститут монокристалів» НАН України |
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| spelling | Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. 2018-06-15T06:11:47Z 2018-06-15T06:11:47Z 2012 Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135379 The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure Еволюція нормального електроопору в недодопованих киснем монокристалах Ho₁Ba₂Cu₃O₇₋δ у процесі прнкладання-знімання високого гідростатичного тиску Article published earlier |
| spellingShingle | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. Characterization and properties |
| title | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_alt | Еволюція нормального електроопору в недодопованих киснем монокристалах Ho₁Ba₂Cu₃O₇₋δ у процесі прнкладання-знімання високого гідростатичного тиску |
| title_full | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_fullStr | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_full_unstemmed | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_short | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_sort | evolution of normal electrical resistance in oxygen underdoped ho₁ba₂cu₃o₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135379 |
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