Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure

The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relax...

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Published in:Functional Materials
Date:2012
Main Authors: Vovk, R.V., Khadzhai, G.Ya., Nazyrov, Z.F.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2012
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/135379
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Cite this:Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Vovk, R.V.
Khadzhai, G.Ya.
Nazyrov, Z.F.
author_facet Vovk, R.V.
Khadzhai, G.Ya.
Nazyrov, Z.F.
citation_txt Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ.
collection DSpace DC
container_title Functional Materials
description The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure.
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format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-12-07T13:18:24Z
publishDate 2012
publisher НТК «Інститут монокристалів» НАН України
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spelling Vovk, R.V.
Khadzhai, G.Ya.
Nazyrov, Z.F.
2018-06-15T06:11:47Z
2018-06-15T06:11:47Z
2012
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135379
The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
Еволюція нормального електроопору в недодопованих киснем монокристалах Ho₁Ba₂Cu₃O₇₋δ у процесі прнкладання-знімання високого гідростатичного тиску
Article
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spellingShingle Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
Vovk, R.V.
Khadzhai, G.Ya.
Nazyrov, Z.F.
Characterization and properties
title Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
title_alt Еволюція нормального електроопору в недодопованих киснем монокристалах Ho₁Ba₂Cu₃O₇₋δ у процесі прнкладання-знімання високого гідростатичного тиску
title_full Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
title_fullStr Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
title_full_unstemmed Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
title_short Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
title_sort evolution of normal electrical resistance in oxygen underdoped ho₁ba₂cu₃o₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/135379
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