The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Functional Materials
Datum:2011
Hauptverfasser: Samoylov, A.M., Belenko, S.V., Dolgopolova, E.A., Khoviv, A.M., Synorov, Y.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2011
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/135452
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique / A.M. Samoylov, S.V. Belenko, E.A. Dolgopolova, A.M. Khoviv, Y.V. Synorov // Functional Materials. — 2011. — Т. 18, № 2. — С. 181-188. — Бібліогр.: 14 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862628303681093632
author Samoylov, A.M.
Belenko, S.V.
Dolgopolova, E.A.
Khoviv, A.M.
Synorov, Y.V.
author_facet Samoylov, A.M.
Belenko, S.V.
Dolgopolova, E.A.
Khoviv, A.M.
Synorov, Y.V.
citation_txt The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique / A.M. Samoylov, S.V. Belenko, E.A. Dolgopolova, A.M. Khoviv, Y.V. Synorov // Functional Materials. — 2011. — Т. 18, № 2. — С. 181-188. — Бібліогр.: 14 назв. — англ.
collection DSpace DC
container_title Functional Materials
first_indexed 2025-11-30T09:11:50Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-135452
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-11-30T09:11:50Z
publishDate 2011
publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Samoylov, A.M.
Belenko, S.V.
Dolgopolova, E.A.
Khoviv, A.M.
Synorov, Y.V.
2018-06-15T11:19:34Z
2018-06-15T11:19:34Z
2011
The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique / A.M. Samoylov, S.V. Belenko, E.A. Dolgopolova, A.M. Khoviv, Y.V. Synorov // Functional Materials. — 2011. — Т. 18, № 2. — С. 181-188. — Бібліогр.: 14 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/135452
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
Розчинність Ga у плівках PbTe, вирощених на кремнієвих підкладках за допомогою модифікованого методу "гарачої стінки"
Article
published earlier
spellingShingle The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
Samoylov, A.M.
Belenko, S.V.
Dolgopolova, E.A.
Khoviv, A.M.
Synorov, Y.V.
Characterization and properties
title The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
title_alt Розчинність Ga у плівках PbTe, вирощених на кремнієвих підкладках за допомогою модифікованого методу "гарачої стінки"
title_full The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
title_fullStr The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
title_full_unstemmed The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
title_short The solubility region of Ga in PbTe films prepared on Si-substrates by modified "hot wall" technique
title_sort solubility region of ga in pbte films prepared on si-substrates by modified "hot wall" technique
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/135452
work_keys_str_mv AT samoylovam thesolubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT belenkosv thesolubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT dolgopolovaea thesolubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT khovivam thesolubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT synorovyv thesolubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT samoylovam rozčinnístʹgauplívkahpbteviroŝenihnakremníêvihpídkladkahzadopomogoûmodifíkovanogometodugaračoístínki
AT belenkosv rozčinnístʹgauplívkahpbteviroŝenihnakremníêvihpídkladkahzadopomogoûmodifíkovanogometodugaračoístínki
AT dolgopolovaea rozčinnístʹgauplívkahpbteviroŝenihnakremníêvihpídkladkahzadopomogoûmodifíkovanogometodugaračoístínki
AT khovivam rozčinnístʹgauplívkahpbteviroŝenihnakremníêvihpídkladkahzadopomogoûmodifíkovanogometodugaračoístínki
AT synorovyv rozčinnístʹgauplívkahpbteviroŝenihnakremníêvihpídkladkahzadopomogoûmodifíkovanogometodugaračoístínki
AT samoylovam solubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT belenkosv solubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT dolgopolovaea solubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT khovivam solubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique
AT synorovyv solubilityregionofgainpbtefilmspreparedonsisubstratesbymodifiedhotwalltechnique