Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
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| Published in: | Functional Materials |
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| Date: | 2011 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/135592 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862646391280500736 |
|---|---|
| author | Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. |
| author_facet | Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. |
| citation_txt | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| first_indexed | 2025-12-01T11:29:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-135592 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-01T11:29:37Z |
| publishDate | 2011 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. 2018-06-15T12:37:04Z 2018-06-15T12:37:04Z 2011 Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135592 en НТК «Інститут монокристалів» НАН України Functional Materials Modeling and simulation Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon Залежність часу життя неосновних носіїв заряду від типу та концентрації точкових дефектів у монокристалічному кремнії Article published earlier |
| spellingShingle | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. Modeling and simulation |
| title | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_alt | Залежність часу життя неосновних носіїв заряду від типу та концентрації точкових дефектів у монокристалічному кремнії |
| title_full | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_fullStr | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_full_unstemmed | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_short | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_sort | dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| topic | Modeling and simulation |
| topic_facet | Modeling and simulation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/135592 |
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