Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2011 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/135592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-135592 |
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Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. 2018-06-15T12:37:04Z 2018-06-15T12:37:04Z 2011 Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/135592 en НТК «Інститут монокристалів» НАН України Functional Materials Modeling and simulation Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon Залежність часу життя неосновних носіїв заряду від типу та концентрації точкових дефектів у монокристалічному кремнії Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| spellingShingle |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. Modeling and simulation |
| title_short |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_full |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_fullStr |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_full_unstemmed |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| title_sort |
dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon |
| author |
Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. |
| author_facet |
Zaitsev, R.V. Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. |
| topic |
Modeling and simulation |
| topic_facet |
Modeling and simulation |
| publishDate |
2011 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Залежність часу життя неосновних носіїв заряду від типу та концентрації точкових дефектів у монокристалічному кремнії |
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/135592 |
| citation_txt |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-12-01T11:29:37Z |
| last_indexed |
2025-12-01T11:29:37Z |
| _version_ |
1850860119022108672 |