Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
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| Published in: | Functional Materials |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2011
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/135592 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ. |