Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon

• Published in: Functional Materials
• Date: 2011
• Main Authors: Zaitsev, R.V., Kopach, V.R., Kirichenko, M.V., Doroshenko, A.N., Khrypunov, G.S.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2011
• Subjects: Modeling and simulation
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/135592
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ.