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Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon

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Veröffentlicht in:	Functional Materials
Datum:	2011
ISSN:	1027-5495
Hauptverfasser:	Zaitsev, R.V., Kopach, V.R., Kirichenko, M.V., Doroshenko, A.N., Khrypunov, G.S.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	НТК «Інститут монокристалів» НАН України 2011
Schlagworte:	Modeling and simulation
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/135592
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ.

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