Metal site doping in the narrow-gap semiconductor FeGa₃
The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa₃ by Fe/Co, Fe/Mn and Co/Ni substitution were investigated by X-ray, electron probe microanalysis, electrical resistivity, specific heat and magnetic susceptibility measurements. Substitution of Fe by Co...
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| Published in: | Фізико-хімічна механіка матеріалів |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-механічний інститут ім. Г.В. Карпенка НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/135826 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Metal site doping in the narrow-gap semiconductor FeGa₃ / B. Kotur, V. Babizhetskyy, E. Bauer, F. Kneidinger, A. Danner, L. Leber, H. Michor // Фізико-хімічна механіка матеріалів. — 2013. — Т. 49, № 2. — С. 69-75. — Бібліогр.: 12 назв. — англ. |