Effective thickness of the planar detector in measurements of electrons energy loss
An experimental method of determining the active region thickness of Si planar detector was used. The method based on the dependence the depletion layer thickness from voltage applied to the detector (U = 0...60 V ). The electron energy loss spectra emitted by ⁹⁰Sr -⁹⁰Y in silicon planar detector we...
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| Veröffentlicht in: | Вопросы атомной науки и техники |
|---|---|
| Datum: | 2017 |
| Hauptverfasser: | Deiev, O.S., Kiprich, S.K., Vasilyev, G.P., Yalovenko, V.I., Ovchinnik, V.D., Shulika, M.Y. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2017
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/136099 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effective thickness of the planar detector in measurements of electrons energy loss / O.S. Deiev, S.K. Kiprich, G.P. Vasilyev, V.I. Yalovenko, V.D. Ovchinnik, M.Y. Shulika // Физика низких температур. — 2017. — № 3. — С. 45-49. — Бібліогр.: 14 назв. — англ. |
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