The aggregation of point defetc in dislocation-free silicon single crystals

• Опубліковано в: Functional Materials
• Дата: 2007
• ISSN: 1027-5495
• Автори: Talanin, V.I., Talanin, I.E., Voronin, A.A., Sirota, A.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: НТК «Інститут монокристалів» НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/136429
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ.

The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation.