The aggregation of point defetc in dislocation-free silicon single crystals
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversatura...
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| Published in: | Functional Materials |
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| Date: | 2007 |
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| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136429 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. |
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Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. 2018-06-16T12:18:04Z 2018-06-16T12:18:04Z 2007 The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/136429 The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation. en НТК «Інститут монокристалів» НАН України Functional Materials The aggregation of point defetc in dislocation-free silicon single crystals Агрегація точкових дефектів у бездислокаційних монокристалах кремнію Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The aggregation of point defetc in dislocation-free silicon single crystals |
| spellingShingle |
The aggregation of point defetc in dislocation-free silicon single crystals Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. |
| title_short |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_full |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_fullStr |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_full_unstemmed |
The aggregation of point defetc in dislocation-free silicon single crystals |
| title_sort |
aggregation of point defetc in dislocation-free silicon single crystals |
| author |
Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. |
| author_facet |
Talanin, V.I. Talanin, I.E. Voronin, A.A. Sirota, A.V. |
| publishDate |
2007 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Агрегація точкових дефектів у бездислокаційних монокристалах кремнію |
| description |
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/136429 |
| citation_txt |
The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. |
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2025-12-07T18:44:58Z |
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2025-12-07T18:44:58Z |
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