CsI(TI) films: deposition, examination of structure and scintillation
The sublimation of the bulk CsI crystal with optimal activator concentration istead of powder source use at vacuum deposition of CsI(TI) films has been shown to provide CsI(TI) films with required content and uniform distribution of activator in the film volume. The CsI(TI) film produced by this tec...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2007 |
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| Format: | Artikel |
| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/136434 |
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| Zitieren: | CsI(TI) films: deposition, examination of structure and scintillation / A. Lebedinsky, A. Fedorov, A. Ananenko, P. Mateychenko // Functional Materials. — 2007. — Т. 14, № 1. — С. 42-47. — Бібліогр.: 7 назв. — англ. |
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Lebedinsky, A. Fedorov, A. Ananenko, A. Mateychenko, P. 2018-06-16T12:25:10Z 2018-06-16T12:25:10Z 2007 CsI(TI) films: deposition, examination of structure and scintillation / A. Lebedinsky, A. Fedorov, A. Ananenko, P. Mateychenko // Functional Materials. — 2007. — Т. 14, № 1. — С. 42-47. — Бібліогр.: 7 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/136434 The sublimation of the bulk CsI crystal with optimal activator concentration istead of powder source use at vacuum deposition of CsI(TI) films has been shown to provide CsI(TI) films with required content and uniform distribution of activator in the film volume. The CsI(TI) film produced by this technology demonstrate superior scintillation characteristics in comparison with CsI(TI) film deposited by a usual technology. The dependence of the film crystalline structure on the deposition conditions has been studied in detail. en НТК «Інститут монокристалів» НАН України Functional Materials CsI(TI) films: deposition, examination of structure and scintillation Плівка CsI(TI) films: отримання, дослідження структури та сцинтіляція Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
CsI(TI) films: deposition, examination of structure and scintillation |
| spellingShingle |
CsI(TI) films: deposition, examination of structure and scintillation Lebedinsky, A. Fedorov, A. Ananenko, A. Mateychenko, P. |
| title_short |
CsI(TI) films: deposition, examination of structure and scintillation |
| title_full |
CsI(TI) films: deposition, examination of structure and scintillation |
| title_fullStr |
CsI(TI) films: deposition, examination of structure and scintillation |
| title_full_unstemmed |
CsI(TI) films: deposition, examination of structure and scintillation |
| title_sort |
csi(ti) films: deposition, examination of structure and scintillation |
| author |
Lebedinsky, A. Fedorov, A. Ananenko, A. Mateychenko, P. |
| author_facet |
Lebedinsky, A. Fedorov, A. Ananenko, A. Mateychenko, P. |
| publishDate |
2007 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Плівка CsI(TI) films: отримання, дослідження структури та сцинтіляція |
| description |
The sublimation of the bulk CsI crystal with optimal activator concentration istead of powder source use at vacuum deposition of CsI(TI) films has been shown to provide CsI(TI) films with required content and uniform distribution of activator in the film volume. The CsI(TI) film produced by this technology demonstrate superior scintillation characteristics in comparison with CsI(TI) film deposited by a usual technology. The dependence of the film crystalline structure on the deposition conditions has been studied in detail.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/136434 |
| citation_txt |
CsI(TI) films: deposition, examination of structure and scintillation / A. Lebedinsky, A. Fedorov, A. Ananenko, P. Mateychenko // Functional Materials. — 2007. — Т. 14, № 1. — С. 42-47. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-12-07T21:04:34Z |
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2025-12-07T21:04:34Z |
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