Dominant point defects in doped cadmium telluride CdTe:Ge

• Veröffentlicht in: Functional Materials
• Datum: 2007
• Hauptverfasser: Freik, D.M., Pysklynets, U.M., Mezhylovska, L.Y.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136487
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ.

Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constant...