Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes

• Veröffentlicht in: Functional Materials
• Datum: 2008
• Hauptverfasser: Katrunov, K.A., Galchinetskii, L.P., Grinyov, B.V., Starzhinskiy, N.G., Bendeberya, G.N., Bondarenko, E.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
• Schlagworte: Technology
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136547
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes // K.A. Katrunov, L.P. Galchinetskii, B.V. Grinyov, N.G. Starzhinskiy, G.N. Bendeberya, E.A. Bondarenko // Functional Materials. — 2008. — Т. 15, № 4. — С. 585-588. — Бібліогр.: 6 назв. — англ.

Effect of technology parameters on the quality of nZnSe(X)/Nl Schottky's surface barrier structure used as components of UV photosensitive detectors are studied. Both the spectrum and the total sensitivity of photodiodes depend substantially on the nickel film thickness. Estimation of the film...