Influence of intensive etching processes on structure and properties of carbon nitride films

The influence of electromagnetic radiation and oxygen impurity in the growth atmosphere on the growth processes of nanostructured carbon nitride CNx films has been studied. The oxygen impurity in the gas mixture and an UV irradiation has been found to decrease the thickness and refraction index of c...

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Veröffentlicht in:Functional Materials
Datum:2008
Hauptverfasser: Shalaev, R.V., Varyukhin, V.N., Prudnikov, A.M., Linnik, A.I., Zhikharev, I.V., Belousov, N.N., Raspornya, D.V., Ulyanov, A.N.
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Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/136548
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Zitieren:Influence of intensive etching processes on structure and properties of carbon nitride films // R.V. Shalaev, V.N. Varyukhin, A.M. Prudnikov, A.I. Linnik, I.V. Zhikharev, N.N. Belousov, D.V. Raspornya, A.N. Ulyanov // Functional Materials. — 2008. — Т. 15, № 4. — С. 580-584. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-136548
record_format dspace
spelling Shalaev, R.V.
Varyukhin, V.N.
Prudnikov, A.M.
Linnik, A.I.
Zhikharev, I.V.
Belousov, N.N.
Raspornya, D.V.
Ulyanov, A.N.
2018-06-16T13:37:43Z
2018-06-16T13:37:43Z
2008
Influence of intensive etching processes on structure and properties of carbon nitride films // R.V. Shalaev, V.N. Varyukhin, A.M. Prudnikov, A.I. Linnik, I.V. Zhikharev, N.N. Belousov, D.V. Raspornya, A.N. Ulyanov // Functional Materials. — 2008. — Т. 15, № 4. — С. 580-584. — Бібліогр.: 15 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/136548
The influence of electromagnetic radiation and oxygen impurity in the growth atmosphere on the growth processes of nanostructured carbon nitride CNx films has been studied. The oxygen impurity in the gas mixture and an UV irradiation has been found to decrease the thickness and refraction index of carbon nitride films, while increasing the optical band gap width. The intensive etching processes result in the formation of closepacked columnar film nanostructures of carbon nitride.
Подано результати досліджень впливу електромагнітного випромінювання і домішок кисню у ростовій атмосфері на процеси росту наноструктурних плівок нітриду вуглецю CNx. Виявлено, що домішка кисню у газовій суміші і ультрафіолетове опромінювання зменшують товщину і коефіцієнт заломлення плівок нітриду вуглецю, збільшують ширину забороненої зони. Показано, що інтенсивні процеси травлення приводять до утворення щільноупакованих колонарних плівкових наноструктур нітриду вуглецю.
Представлены результаты исследований влияния электромагнитного излучения и примесей кислорода в ростовой атмосфере на процессы роста наноструктурных пленок нитрида углерода CNx. Обнаружено, что примесь кислорода в газовой смеси и УФ облучение уменьшают толщину и коэффициент преломления пленок нитрида углерода и увеличивают ширину запрещенной зоны. Интенсивные травящие процессы приводят к образованию плотноупакованных колонарных пленочных наноструктур нитрида углерода.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Technology
Influence of intensive etching processes on structure and properties of carbon nitride films
Вплив інтенсивних процесів травлення на структуру та властивості плівок нітриду вуглецю
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of intensive etching processes on structure and properties of carbon nitride films
spellingShingle Influence of intensive etching processes on structure and properties of carbon nitride films
Shalaev, R.V.
Varyukhin, V.N.
Prudnikov, A.M.
Linnik, A.I.
Zhikharev, I.V.
Belousov, N.N.
Raspornya, D.V.
Ulyanov, A.N.
Technology
title_short Influence of intensive etching processes on structure and properties of carbon nitride films
title_full Influence of intensive etching processes on structure and properties of carbon nitride films
title_fullStr Influence of intensive etching processes on structure and properties of carbon nitride films
title_full_unstemmed Influence of intensive etching processes on structure and properties of carbon nitride films
title_sort influence of intensive etching processes on structure and properties of carbon nitride films
author Shalaev, R.V.
Varyukhin, V.N.
Prudnikov, A.M.
Linnik, A.I.
Zhikharev, I.V.
Belousov, N.N.
Raspornya, D.V.
Ulyanov, A.N.
author_facet Shalaev, R.V.
Varyukhin, V.N.
Prudnikov, A.M.
Linnik, A.I.
Zhikharev, I.V.
Belousov, N.N.
Raspornya, D.V.
Ulyanov, A.N.
topic Technology
topic_facet Technology
publishDate 2008
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Вплив інтенсивних процесів травлення на структуру та властивості плівок нітриду вуглецю
description The influence of electromagnetic radiation and oxygen impurity in the growth atmosphere on the growth processes of nanostructured carbon nitride CNx films has been studied. The oxygen impurity in the gas mixture and an UV irradiation has been found to decrease the thickness and refraction index of carbon nitride films, while increasing the optical band gap width. The intensive etching processes result in the formation of closepacked columnar film nanostructures of carbon nitride. Подано результати досліджень впливу електромагнітного випромінювання і домішок кисню у ростовій атмосфері на процеси росту наноструктурних плівок нітриду вуглецю CNx. Виявлено, що домішка кисню у газовій суміші і ультрафіолетове опромінювання зменшують товщину і коефіцієнт заломлення плівок нітриду вуглецю, збільшують ширину забороненої зони. Показано, що інтенсивні процеси травлення приводять до утворення щільноупакованих колонарних плівкових наноструктур нітриду вуглецю. Представлены результаты исследований влияния электромагнитного излучения и примесей кислорода в ростовой атмосфере на процессы роста наноструктурных пленок нитрида углерода CNx. Обнаружено, что примесь кислорода в газовой смеси и УФ облучение уменьшают толщину и коэффициент преломления пленок нитрида углерода и увеличивают ширину запрещенной зоны. Интенсивные травящие процессы приводят к образованию плотноупакованных колонарных пленочных наноструктур нитрида углерода.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/136548
citation_txt Influence of intensive etching processes on structure and properties of carbon nitride films // R.V. Shalaev, V.N. Varyukhin, A.M. Prudnikov, A.I. Linnik, I.V. Zhikharev, N.N. Belousov, D.V. Raspornya, A.N. Ulyanov // Functional Materials. — 2008. — Т. 15, № 4. — С. 580-584. — Бібліогр.: 15 назв. — англ.
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first_indexed 2025-11-25T23:46:43Z
last_indexed 2025-11-25T23:46:43Z
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