Excitonic photoconductivity of heterostructures based on gallium and indium selenides
Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are p...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2017 |
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| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/136716 |
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| Zitieren: | Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862543114324934656 |
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| author | Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. |
| author_facet | Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. |
| citation_txt | Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties.
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| first_indexed | 2025-11-24T21:38:41Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-136716 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-24T21:38:41Z |
| publishDate | 2017 |
| publisher | НТК «Інститут монокристалів» НАН України |
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| spelling | Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. 2018-06-16T15:24:25Z 2018-06-16T15:24:25Z 2017 Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.02.203 https://nasplib.isofts.kiev.ua/handle/123456789/136716 Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Excitonic photoconductivity of heterostructures based on gallium and indium selenides Article published earlier |
| spellingShingle | Excitonic photoconductivity of heterostructures based on gallium and indium selenides Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Characterization and properties |
| title | Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_full | Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_fullStr | Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_full_unstemmed | Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_short | Excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| title_sort | excitonic photoconductivity of heterostructures based on gallium and indium selenides |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136716 |
| work_keys_str_mv | AT katerynchukvm excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT kovalyukzd excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT tkachukig excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides |