Excitonic photoconductivity of heterostructures based on gallium and indium selenides

Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are p...

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Опубліковано в: :	Functional Materials
Дата:	2017
Автори:	Katerynchuk, V.M., Kovalyuk, Z.D., Tkachuk, I.G.
Формат:	Стаття
Мова:	English
Опубліковано:	НТК «Інститут монокристалів» НАН України 2017
Теми:	Characterization and properties
Онлайн доступ:	https://nasplib.isofts.kiev.ua/handle/123456789/136716
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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spelling	Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. 2018-06-16T15:24:25Z 2018-06-16T15:24:25Z 2017 Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.02.203 https://nasplib.isofts.kiev.ua/handle/123456789/136716 Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Excitonic photoconductivity of heterostructures based on gallium and indium selenides Article published earlier
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
title	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
spellingShingle	Excitonic photoconductivity of heterostructures based on gallium and indium selenides Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Characterization and properties
title_short	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_full	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_fullStr	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_full_unstemmed	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_sort	excitonic photoconductivity of heterostructures based on gallium and indium selenides
author	Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G.
author_facet	Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G.
topic	Characterization and properties
topic_facet	Characterization and properties
publishDate	2017
language	English
container_title	Functional Materials
publisher	НТК «Інститут монокристалів» НАН України
format	Article
description	Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties.
issn	1027-5495
url	https://nasplib.isofts.kiev.ua/handle/123456789/136716
citation_txt	Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ.
work_keys_str_mv	AT katerynchukvm excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT kovalyukzd excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT tkachukig excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides
first_indexed	2025-11-24T21:38:41Z
last_indexed	2025-11-24T21:38:41Z
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Excitonic photoconductivity of heterostructures based on gallium and indium selenides

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