Excitonic photoconductivity of heterostructures based on gallium and indium selenides

Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Datum:	2017
Hauptverfasser:	Katerynchuk, V.M., Kovalyuk, Z.D., Tkachuk, I.G.
Format:	Artikel
Sprache:	English
Veröffentlicht:	НТК «Інститут монокристалів» НАН України 2017
Schriftenreihe:	Functional Materials
Schlagworte:	Characterization and properties
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/136716
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	nasplib_isofts_kiev_ua-123456789-136716
record_format	dspace
spelling	nasplib_isofts_kiev_ua-123456789-1367162025-02-23T20:04:37Z Excitonic photoconductivity of heterostructures based on gallium and indium selenides Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Characterization and properties Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties. 2017 Article Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.02.203 https://nasplib.isofts.kiev.ua/handle/123456789/136716 en Functional Materials application/pdf НТК «Інститут монокристалів» НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
topic	Characterization and properties Characterization and properties
spellingShingle	Characterization and properties Characterization and properties Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G. Excitonic photoconductivity of heterostructures based on gallium and indium selenides Functional Materials
description	Present spectra of photosensitivity of various types of heterojunctions based on layered crystals A³B⁶ made of the Van der Waals connection of pairs on heteromer as well as covalent. We also discuss the features of excitonic bands of the crystals. Examples of the first type, the heterojunction are pairs of n-InSe-p-InSe and p-GaSe-n-InSe and p-GaSe-n-In₄Se₃, n-SnS₂-p-InSe. As examples of heterojunction with a the covalent bond are the other systems: In₂O₃-InSe, In₂O₃-Ga₂O₃-GaSe, In₂O₃-Ga₂O₃-GaTe. These heterojunctions formed with participation of their oxides of different chemical nature. In the case when the oxide has leading properties, it plays a direct active role in the heterojunction formation. However, the formation of the heterojunction using high temperature heating of the substrates at air, naturally leads to uncontrolled growth of its own oxides on p-GaSe and p-GaTe which shows dielectric properties.
format	Article
author	Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G.
author_facet	Katerynchuk, V.M. Kovalyuk, Z.D. Tkachuk, I.G.
author_sort	Katerynchuk, V.M.
title	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_short	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_full	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_fullStr	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_full_unstemmed	Excitonic photoconductivity of heterostructures based on gallium and indium selenides
title_sort	excitonic photoconductivity of heterostructures based on gallium and indium selenides
publisher	НТК «Інститут монокристалів» НАН України
publishDate	2017
topic_facet	Characterization and properties
url	https://nasplib.isofts.kiev.ua/handle/123456789/136716
citation_txt	Excitonic photoconductivity of heterostructures based on gallium and indium selenides / V.M. Katerynchuk, Z.D. Kovalyuk, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 2. — С. 203-205. — Бібліогр.: 9 назв. — англ.
series	Functional Materials
work_keys_str_mv	AT katerynchukvm excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT kovalyukzd excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides AT tkachukig excitonicphotoconductivityofheterostructuresbasedongalliumandindiumselenides
first_indexed	2025-11-24T21:38:41Z
last_indexed	2025-11-24T21:38:41Z
_version_	1849709372795518976
fulltext	�� !� �� " �� #�� "$%%& �� !� �� ! �� "� � � �� # �� $�� # �# �� # �� #�� # �� %&'�()+,'-. (/'0)&. 12)2�3+()+4)',�-2()4 &5,4�-.6 )4/2+ �')'&2/'&'62�2+ -* 2(-2+' (,24().6 0&4(),,2+ �� 45�2)2+,'--.6 00 ( +-��'&�+,�(2+27 (+8� 5�� /& -* �')'&2�&-4�'� )0 4 ( 02+,'-)-27� 29(3:��)(8 2(29'--2()4 46 '0(4)2-� -46 /2,2(� %&4;'&;4 /'&+2�2 )4/ �')'&2/'&'62�* /2(,3:4,4 /&. �� < 0�'()+' �')'&2/'&'62�* ( 02+,'-)� -27 (+85�� 205,4(� �&3�4' (4()';. �� < (,3�'� ��' 20(4� 29,�') +'�3=4;4 (+27()+;4� 2- 4�&, -'/2(&'�()+'--3� 0)4+-3� &2,� + 12&;4&2+-44 �')'&2/'&'62�� <;'()' ( )';� 12&� ;4&2+-4' �')'&2/'&'62�* ( /2;2=�� +.(202)';/'&)3&-2�2 -�&'+* /2�,2:'0 -* +25� �36' -'/&4-3:�'--2 /&4+2�4,2 0 -'02-)&2,4&3';2;3 &2()3 (29()+'--.6 20(4�2+ -* �� 4 �� 02)2&.' /&28+4,4 �4>,'0)&4�'(04' (+27()+� �� %&'�()+,'-2 (/'0)&4 12)2�3),4+2()� &�5-46 )4/�+ �')'&2/'&'62��+ -* 2(-2+� �&3� +)46 0&4(),�+ �� +4�2)2+,'-46 80 5 +-��'&�+*,�(�+(�04; 5+?8502; /& -* �')'� &2;':�� )0 � 5 02+,'-)-4;� 29�2+2&��)�(8 2(29,4+2()� @6 '0(4)2--46 (;3�� %&40,� �;4 /'&�2�2 )4/3 �')'&2/'&'62�3 A /&4 �� < 802()� �')'&2/'&'62�3 5 02+,'-)-4; 5+?8502; +48+4,4(8 �-�� (4()';4 �� B +4/�03� �' 20(4� +2� ,2��A /&2+��-4;4 +,()4+2()8;4� +�- +��&++ 9'5/2('&'�-� 0)4+-3 &2,� 3 12&;3� +--� �')'&2/'&'62�3� <2�-2�(� 12&;3+--8 �')'&2/'&'62�3 5 �2/2;2�2� +4(202)';/'&� )3&-2�2 -�&�+3 /��0,�20 - /2+�)&�� -'+4;3�'-2 /&4+2�4,2 �2 -'02-)&2,�2+-2�2 &2()3 +,(-46 20(4��+ -* �� 80� /&28+4,4 ��','0)&4�-� +,()4+2()�� "CCD EFGH�IJKI� L�� M �� GJ� D��G NGFEHO� �� GFP�GFI� �� QQ��#QEF�EIJFHQ��GJ�FG�GFP R GFEH S C!T U"�� C��#�� T�� U �� !��"� �� #� #$%& #$' �� !� � �� "�� #$$%& �� !�� '�� !�� '�� (%)� �� �� +�� (,)� -� �� (.)� -� �� /� � �� 012�. � � �� ,3 �4�� " � � �� !�� '�� /� � �� "�� %� �� L�#� E� C�� V� �� ( % S � ��W # S ��W ' S �� W ) S �� O % S �� W # S �� W ' S �� +�,�-�� !.��/�0 � �� 1 23�� 4/��5��6��. �� #$) �� !��"� �� #� #$%& �� 5 �� (6� 7) �� (3) �� (8� 9) �� �� %: �� ; � � �� 2�� ; � � �� - �� δ � < % =� > �� δ � � �� δ � �� #"�� %� ? � �� ; "�� %� � �� &� * �� @ �� @ �� (7� 3� 9� A)� �� " � �� * �� B �� ? !�� '�� E� ��X�Y�� "��Y��#�� 7��! � �� JKK NGFEPO� G� Z�[�\�� ]� ��M�\ �� ]� !��^�� 84��,�� !�� GHK NGFFEO� P� ��M� \ �� ]� M�Z�\�� ]� M�Z�!�� ]�� 9� 84�� !� :56�,�� !�� _IP NGFFPO� J� ��M�\ �� ]� M�Z�\�� ]� ;/."� <�� <�� JI NEKKGO� I� ��`�[ � �� a�T�a�� 9�,�� !� <�� E NEK_JO� b� C�[�� ^�Y�� ]� ��!�� :44�� <�!=� <�� GIP� P_KK NGFFHO� H� ^�� $�C�Y�� $��#�� c�\�c�#�� 9� ;/."� >? :44�� <�!=� <�� G� GKJG NEKKKO� _� ��c � �� C�� !�Y�� ;/."� @ 6�� PIGEF NGFFEO� K� M�\��] � d�M�� M�D�� ]� +�� EJP NGFFGO� ! �� M �� γe�� βe� �� εe� �� N�O J�FFG EH�JFJ P�HII P�bJ_ EI�GKb EF�EE EF�FF *� N�O e J�FHH e e EG�PF_ e e �� N�O GJ�KJb EF�JIb EI�KI I�_KK J�F_Fb e e @ � N��O EJ�I E_�K GF e e e e ! � N�O IF PE�E JE�I e e e e � �� δ � NfO �� F K�GI b�PH EGE�Eb _b�Ib IJ�FJ KF�_F +�,�-�� !.��/�0 � �� 1 23�� 4/��5��6��. �� !��"� �� #� #$%& #$A

Excitonic photoconductivity of heterostructures based on gallium and indium selenides

Institution

Ähnliche Einträge