Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis...
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| Published in: | Functional Materials |
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| Date: | 2017 |
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| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136789 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862540372418232320 |
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| author | Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. |
| author_facet | Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. |
| citation_txt | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established.
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| first_indexed | 2025-11-24T16:07:15Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-136789 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-24T16:07:15Z |
| publishDate | 2017 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. 2018-06-16T16:14:27Z 2018-06-16T16:14:27Z 2017 Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.03.372 https://nasplib.isofts.kiev.ua/handle/123456789/136789 A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis Article published earlier |
| spellingShingle | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. Characterization and properties |
| title | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_full | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_fullStr | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_full_unstemmed | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_short | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_sort | layered crystals fein₂se₄, in₄se₃ and heterojunctions on their basis |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136789 |
| work_keys_str_mv | AT kushnirbv layeredcrystalsfein2se4in4se3andheterojunctionsontheirbasis AT kovalyukzd layeredcrystalsfein2se4in4se3andheterojunctionsontheirbasis AT katerynchukvm layeredcrystalsfein2se4in4se3andheterojunctionsontheirbasis AT netyagavv layeredcrystalsfein2se4in4se3andheterojunctionsontheirbasis AT tkachukig layeredcrystalsfein2se4in4se3andheterojunctionsontheirbasis |