Kirchhoff and electron curvature indexes for SiC nanoclusters

To characterize carborundum nanoclusters (nano-SiC) we employ the topological Kirchhoff index and average energy of molecular graphs. Additionally, electron-kinematic indexes which reflect an average curvature of electron paths in molecule, are invoked. The main polytypes, namely, 3C-SiC and 2pH-SiC...

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Veröffentlicht in:Functional Materials
Datum:2017
1. Verfasser: Luzanov, A.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2017
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/136807
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Kirchhoff and electron curvature indexes for SiC nanoclusters / A.V. Luzanov // Functional Materials. — 2017. — Т. 24, № 3. — С. 434-441. — Бібліогр.: 35 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:To characterize carborundum nanoclusters (nano-SiC) we employ the topological Kirchhoff index and average energy of molecular graphs. Additionally, electron-kinematic indexes which reflect an average curvature of electron paths in molecule, are invoked. The main polytypes, namely, 3C-SiC and 2pH-SiC, p = 1÷4, are investigated. It is established that the topological indexes make only a slight distinction between nano-SiC of the different polytypes. Quite the opposite, the electron curvature indexes provide a clear discrimination of the polytypes. In particular, the curvature indexes are ordered just in the same manner as the hexagonality measure known for such polytypes. For the electron curvatures, an effective algorithm is elaborated, allowing us to analyze nano-SiC with 10⁴ and more atoms even by using laptops.
ISSN:1027-5495