Dependence of electrical conductivity on Bi₂Se₃ thin film thickness

Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed eff...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Functional Materials
Datum:2017
Hauptverfasser: Menshikova, S.I., Rogacheva, E.I., Sipatov, A.Yu., Fedorov, A.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2017
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/136886
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862633702709788672
author Menshikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Fedorov, A.G.
author_facet Menshikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Fedorov, A.G.
citation_txt Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ.
collection DSpace DC
container_title Functional Materials
description Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data.
first_indexed 2025-11-30T14:45:50Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-136886
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-11-30T14:45:50Z
publishDate 2017
publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Menshikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Fedorov, A.G.
2018-06-16T17:20:51Z
2018-06-16T17:20:51Z
2017
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ.
1027-5495
DOI: https://doi.org/10.15407/fm24.04.555
https://nasplib.isofts.kiev.ua/handle/123456789/136886
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Article
published earlier
spellingShingle Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Menshikova, S.I.
Rogacheva, E.I.
Sipatov, A.Yu.
Fedorov, A.G.
Characterization and properties
title Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
title_full Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
title_fullStr Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
title_full_unstemmed Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
title_short Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
title_sort dependence of electrical conductivity on bi₂se₃ thin film thickness
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/136886
work_keys_str_mv AT menshikovasi dependenceofelectricalconductivityonbi2se3thinfilmthickness
AT rogachevaei dependenceofelectricalconductivityonbi2se3thinfilmthickness
AT sipatovayu dependenceofelectricalconductivityonbi2se3thinfilmthickness
AT fedorovag dependenceofelectricalconductivityonbi2se3thinfilmthickness