Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed eff...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2017 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/136886 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633702709788672 |
|---|---|
| author | Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. |
| author_facet | Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. |
| citation_txt | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data.
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| first_indexed | 2025-11-30T14:45:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-136886 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-30T14:45:50Z |
| publishDate | 2017 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. 2018-06-16T17:20:51Z 2018-06-16T17:20:51Z 2017 Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.04.555 https://nasplib.isofts.kiev.ua/handle/123456789/136886 Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Dependence of electrical conductivity on Bi₂Se₃ thin film thickness Article published earlier |
| spellingShingle | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. Characterization and properties |
| title | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_full | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_fullStr | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_full_unstemmed | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_short | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_sort | dependence of electrical conductivity on bi₂se₃ thin film thickness |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136886 |
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