Chemical polishing of InAs, InSb, GaAs and GaSb
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)...
Збережено в:
| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2017 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/136890 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-136890 |
|---|---|
| record_format |
dspace |
| spelling |
Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. 2018-06-16T17:23:19Z 2018-06-16T17:23:19Z 2017 Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.04.654 https://nasplib.isofts.kiev.ua/handle/123456789/136890 The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Chemical polishing of InAs, InSb, GaAs and GaSb Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| spellingShingle |
Chemical polishing of InAs, InSb, GaAs and GaSb Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. Technology |
| title_short |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_fullStr |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full_unstemmed |
Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_sort |
chemical polishing of inas, insb, gaas and gasb |
| author |
Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| author_facet |
Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| topic |
Technology |
| topic_facet |
Technology |
| publishDate |
2017 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/136890 |
| citation_txt |
Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
| work_keys_str_mv |
AT levchenkoiv chemicalpolishingofinasinsbgaasandgasb AT tomashykvm chemicalpolishingofinasinsbgaasandgasb AT stratiychukib chemicalpolishingofinasinsbgaasandgasb AT malanychgp chemicalpolishingofinasinsbgaasandgasb AT stanetskaas chemicalpolishingofinasinsbgaasandgasb AT korchovyiaa chemicalpolishingofinasinsbgaasandgasb |
| first_indexed |
2025-12-07T16:15:49Z |
| last_indexed |
2025-12-07T16:15:49Z |
| _version_ |
1850866820661116928 |