Chemical polishing of InAs, InSb, GaAs and GaSb
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)...
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| Published in: | Functional Materials |
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| Date: | 2017 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/136890 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862691394263449600 |
|---|---|
| author | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| author_facet | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| citation_txt | Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.
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| first_indexed | 2025-12-07T16:15:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-136890 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T16:15:49Z |
| publishDate | 2017 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. 2018-06-16T17:23:19Z 2018-06-16T17:23:19Z 2017 Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.04.654 https://nasplib.isofts.kiev.ua/handle/123456789/136890 The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Chemical polishing of InAs, InSb, GaAs and GaSb Article published earlier |
| spellingShingle | Chemical polishing of InAs, InSb, GaAs and GaSb Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. Technology |
| title | Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full | Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_fullStr | Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_full_unstemmed | Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_short | Chemical polishing of InAs, InSb, GaAs and GaSb |
| title_sort | chemical polishing of inas, insb, gaas and gasb |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136890 |
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