Chemical polishing of InAs, InSb, GaAs and GaSb

• Veröffentlicht in: Functional Materials
• Datum: 2017
• Hauptverfasser: Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2017
• Schlagworte: Technology
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136890
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ.

The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)...