Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers

The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and...

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Veröffentlicht in:Functional Materials
Datum:2007
Hauptverfasser: Druzhinin, A.A., Ostrovskii, I.P., Kogut, Yu.R., Warchulska, J.K.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/136922
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-136922
record_format dspace
spelling Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
2018-06-16T17:49:49Z
2018-06-16T17:49:49Z
2007
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/136922
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
Магнітоопір та магнітна сприйнятливість легованих ниткоподібних кристалів Si-Ge
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
spellingShingle Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
Characterization and properties
title_short Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_full Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_fullStr Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_full_unstemmed Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_sort magnetoresistance and magnetic susceptibility of doped si-ge whiskers
author Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
author_facet Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2007
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Магнітоопір та магнітна сприйнятливість легованих ниткоподібних кристалів Si-Ge
description The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/136922
citation_txt Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.
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AT druzhininaa magnítoopírtamagnítnaspriinâtlivístʹlegovanihnitkopodíbnihkristalívsige
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last_indexed 2025-12-07T19:23:24Z
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