Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2007 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2007
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. |
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Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. 2018-06-16T17:49:49Z 2018-06-16T17:49:49Z 2007 Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/136922 The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers Магнітоопір та магнітна сприйнятливість легованих ниткоподібних кристалів Si-Ge Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
| spellingShingle |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. Characterization and properties |
| title_short |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
| title_full |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
| title_fullStr |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
| title_full_unstemmed |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
| title_sort |
magnetoresistance and magnetic susceptibility of doped si-ge whiskers |
| author |
Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. |
| author_facet |
Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2007 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Магнітоопір та магнітна сприйнятливість легованих ниткоподібних кристалів Si-Ge |
| description |
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/136922 |
| citation_txt |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. |
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| first_indexed |
2025-12-07T19:23:24Z |
| last_indexed |
2025-12-07T19:23:24Z |
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