Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers

• Published in: Functional Materials
• Date: 2007
• Main Authors: Druzhinin, A.A., Ostrovskii, I.P., Kogut, Yu.R., Warchulska, J.K.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2007
• Subjects: Characterization and properties
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/136922
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.

The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS...