Prosperity and difficulty of bulk crystal growth of semiconductor compound (a review)

• Опубліковано в: : Functional Materials
• Дата: 2007
• Автор: Rudolph, P.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: НТК «Інститут монокристалів» НАН України 2007
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/136926
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Prosperity and difficulty of bulk crystal growth of semiconductor compound (a review) / P. Rudolph // Functional Materials. — 2007. — Т. 14, № 4. — С. 411-425. — Бібліогр.: 76 назв. — англ.

Semiconductor compounds are now and in future of central importance for human life. A relatively high degree of production maturity has been already achieved. GaAs holds a leading position for opto- and high-frequency microelectronics that will be continuously developed further. Single crystalline y...