Prosperity and difficulty of bulk crystal growth of semiconductor compound (a review)

• Veröffentlicht in: Functional Materials
• Datum: 2007
• 1. Verfasser: Rudolph, P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136926
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Prosperity and difficulty of bulk crystal growth of semiconductor compound (a review) / P. Rudolph // Functional Materials. — 2007. — Т. 14, № 4. — С. 411-425. — Бібліогр.: 76 назв. — англ.

Semiconductor compounds are now and in future of central importance for human life. A relatively high degree of production maturity has been already achieved. GaAs holds a leading position for opto- and high-frequency microelectronics that will be continuously developed further. Single crystalline y...