Effect of growth atmosphere on Ce³⁺ incorporation in Gd₂SiO₅ single crystals

Peculiarities of oxide crystal growth by the Czochralski technique have been discussed in the present paper. A correlation between oxygen content in the growth atmosphere and the Ce³⁺ incorporation coefficient at growing the GSO:Ce crystals has been revealed in experiment. Possible mechanisms of the...

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Veröffentlicht in:Functional Materials
Datum:2007
Hauptverfasser: Bondar, V.G., Krivoshein, V.I., Martynov, V.P., Nagornaya, L.L., Sideletskiy, O.Ts.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/136938
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of growth atmosphere on Ce³⁺ incorporation in Gd₂SiO₅ single crystals / V.G. Bondar, V.I. Krivoshein, V.P. Martynov, L.L. Nagornaya, O.Ts. Sideletskiy // Functional Materials. — 2007. — Т. 14, № 4. — С. 546-549. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:Peculiarities of oxide crystal growth by the Czochralski technique have been discussed in the present paper. A correlation between oxygen content in the growth atmosphere and the Ce³⁺ incorporation coefficient at growing the GSO:Ce crystals has been revealed in experiment. Possible mechanisms of the oxygen concentration influence on the cerium ion incorporation coefficient are discussed. The studies performed have shown an important part played by the growth atmosphere in the growing of oxide crystals with reproducible performance characteristics.
ISSN:1027-5495