Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/136987 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-136987 |
|---|---|
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dspace |
| spelling |
Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. 2018-06-16T18:24:12Z 2018-06-16T18:24:12Z 2007 Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/136987 Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements. en НТК «Інститут монокристалів» НАН України Functional Materials Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| spellingShingle |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| title_short |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_full |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_fullStr |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_full_unstemmed |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_sort |
defect formation on diffusive layers of znse:sn and znse:mg |
| author |
Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| author_facet |
Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| publishDate |
2007 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg |
| description |
Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/136987 |
| citation_txt |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. |
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| first_indexed |
2025-12-07T18:50:57Z |
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2025-12-07T18:50:57Z |
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