Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2007 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2007
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/136987 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862725021780148224 |
|---|---|
| author | Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| author_facet | Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| citation_txt | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.
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| first_indexed | 2025-12-07T18:50:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-136987 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T18:50:57Z |
| publishDate | 2007 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. 2018-06-16T18:24:12Z 2018-06-16T18:24:12Z 2007 Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/136987 Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements. en НТК «Інститут монокристалів» НАН України Functional Materials Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg Article published earlier |
| spellingShingle | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg Gryvul, V.I. Makhniy, V.P. Tkachenko, I.V. |
| title | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_alt | Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg |
| title_full | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_fullStr | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_full_unstemmed | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_short | Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg |
| title_sort | defect formation on diffusive layers of znse:sn and znse:mg |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/136987 |
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