Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...

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Опубліковано в: :Functional Materials
Дата:2007
Автори: Gryvul, V.I., Makhniy, V.P., Tkachenko, I.V.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2007
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/136987
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-136987
record_format dspace
spelling Gryvul, V.I.
Makhniy, V.P.
Tkachenko, I.V.
2018-06-16T18:24:12Z
2018-06-16T18:24:12Z
2007
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.
1027-5495
https://nasplib.isofts.kiev.ua/handle/123456789/136987
Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
spellingShingle Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
Gryvul, V.I.
Makhniy, V.P.
Tkachenko, I.V.
title_short Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
title_full Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
title_fullStr Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
title_full_unstemmed Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
title_sort defect formation on diffusive layers of znse:sn and znse:mg
author Gryvul, V.I.
Makhniy, V.P.
Tkachenko, I.V.
author_facet Gryvul, V.I.
Makhniy, V.P.
Tkachenko, I.V.
publishDate 2007
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
title_alt Дефектоутворення у дифузійних шарах ZnSe:Sn і ZnSe:Mg
description Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/136987
citation_txt Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.
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AT makhniyvp defectformationondiffusivelayersofznsesnandznsemg
AT tkachenkoiv defectformationondiffusivelayersofznsesnandznsemg
AT gryvulvi defektoutvorennâudifuzíinihšarahznsesníznsemg
AT makhniyvp defektoutvorennâudifuzíinihšarahznsesníznsemg
AT tkachenkoiv defektoutvorennâudifuzíinihšarahznsesníznsemg
first_indexed 2025-12-07T18:50:57Z
last_indexed 2025-12-07T18:50:57Z
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