Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

• Published in: Functional Materials
• Date: 2007
• Main Authors: Gryvul, V.I., Makhniy, V.P., Tkachenko, I.V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2007
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/136987
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.

Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...