Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg

• Veröffentlicht in: Functional Materials
• Datum: 2007
• Hauptverfasser: Gryvul, V.I., Makhniy, V.P., Tkachenko, I.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/136987
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.

Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurem...