Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of...
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| Published in: | Functional Materials |
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| Date: | 2008 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/137225 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ. |
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Kulyk, S.P. Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. 2018-06-17T09:08:19Z 2018-06-17T09:08:19Z 2008 Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/137225 The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy Вивчення наноструктурованих плівок монокристалічного кремнію методом сканувальної тунельної спектроскопії Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| spellingShingle |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy Kulyk, S.P. Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. Characterization and properties |
| title_short |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| title_full |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| title_fullStr |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| title_full_unstemmed |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| title_sort |
study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy |
| author |
Kulyk, S.P. Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. |
| author_facet |
Kulyk, S.P. Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2008 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Вивчення наноструктурованих плівок монокристалічного кремнію методом сканувальної тунельної спектроскопії |
| description |
The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/137225 |
| citation_txt |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ. |
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2025-12-07T13:32:18Z |
| last_indexed |
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1850856532228440064 |